Inventor
DJOMEHRI IHSAN J
US2 patents
Patents
2 patentsUS6955969B2Oct 18, 2005
Method of growing as a channel region to reduce source/drain junction capacitance
ADVANCED MICRO DEVICES INC89 citations97
US6929992B1Aug 16, 2005
Strained silicon MOSFETs having NMOS gates with work functions for compensating NMOS threshold voltage shift
ADVANCED MICRO DEVICES INC78 citations96