Inventor
FERRANT RICHARD
FR79 patents
⚠️ This page may combine multiple inventors who share the name “FERRANT RICHARD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MAZURE CARLOS
10 patentsUS8305803B2Nov 6, 2012
DRAM memory cell having a vertical bipolar injector
MAZURE CARLOS27 citations92
US8575697B2Nov 5, 2013
SRAM-type memory cell
MAZURE CARLOS13 citations84
US8223582B2Jul 17, 2012
Pseudo-inverter circuit on SeOI
MAZURE CARLOS6 citations84
US9490264B2Nov 8, 2016
Device having a contact between semiconductor regions through a buried insulating layer, and process for fabricating said device
MAZURE CARLOS5 citations73
US9035474B2May 19, 2015
Method for manufacturing a semiconductor substrate
MAZURE CARLOS4 citations73
US8664712B2Mar 4, 2014
Flash memory cell on SeOI having a second control gate buried under the insulating layer
MAZURE CARLOS6 citations73
US8654602B2Feb 18, 2014
Pseudo-inverter circuit on SeOI
MAZURE CARLOS3 citations63
US8508289B2Aug 13, 2013
Data-path cell on an SeOI substrate with a back control gate beneath the insulating layer
MAZURE CARLOS4 citations63
US8432216B2Apr 30, 2013
Data-path cell on an SeOI substrate with a back control gate beneath the insulating layer
MAZURE CARLOS4 citations63
US8325506B2Dec 4, 2012
Devices and methods for comparing data in a content-addressable memory
MAZURE CARLOS3 citations63
ST MICROELECTRONICS SA
9 patentsUS6535987B1Mar 18, 2003
Amplifier with a fan-out variable in time
ST MICROELECTRONICS SA30 citations93
US6421799B1Jul 16, 2002
Redundancy correction ROM
ST MICROELECTRONICS SA19 citations93
US6205077B1Mar 20, 2001
One-time programmable logic cell
ST MICROELECTRONICS SA25 citations93
US6563749B2May 13, 2003
Dynamic memory circuit including spare cells
ST MICROELECTRONICS SA14 citations84
US6538942B2Mar 25, 2003
Process for controlling a read access for a dynamic random access memory and corresponding memory
ST MICROELECTRONICS SA15 citations84
US6452841B1Sep 17, 2002
Dynamic random access memory device and corresponding reading process
ST MICROELECTRONICS SA8 citations74
US6215706B1Apr 10, 2001
Fast structure dram
ST MICROELECTRONICS SA8 citations74
US6091650AJul 18, 2000
Redundancy for low remanence memory cells
ST MICROELECTRONICS SA12 citations74
US6360294B1Mar 19, 2002
Device and method for simultaneously reading/rewriting a dynamic random-access memory cell using a plurality of amplifiers and isolation circuitry
ST MICROELECTRONICS SA11 citations72
ALTIS SEMICONDUCTOR SNC
5 patentsUS7212432B2May 1, 2007
Resistive memory cell random access memory device and method of fabrication
ALTIS SEMICONDUCTOR SNC115 citations98
US7180160B2Feb 20, 2007
MRAM storage device
ALTIS SEMICONDUCTOR SNC73 citations94
US7068533B2Jun 27, 2006
Resistive memory cell configuration and method for sensing resistance values
ALTIS SEMICONDUCTOR SNC21 citations92
US7130206B2Oct 31, 2006
Content addressable memory cell including resistive memory elements
ALTIS SEMICONDUCTOR SNC11 citations84
US7200032B2Apr 3, 2007
MRAM with vertical storage element and field sensor
ALTIS SEMICONDUCTOR SNC8 citations74
INNOVATIVE SILICON SA
4 patentsUS7187581B2Mar 6, 2007
Semiconductor memory device and method of operating same
INNOVATIVE SILICON SA148 citations99
US7085153B2Aug 1, 2006
Semiconductor memory cell, array, architecture and device, and method of operating same
INNOVATIVE SILICON SA231 citations99
US7085156B2Aug 1, 2006
Semiconductor memory device and method of operating same
INNOVATIVE SILICON SA358 citations99
US7359229B2Apr 15, 2008
Semiconductor memory device and method of operating same
INNOVATIVE SILICON SA40 citations96
SGS THOMSON MICROELECTRONICS
4 patentsUS5862091AJan 19, 1999
Memory accessible in read mode only
SGS THOMSON MICROELECTRONICS21 citations89
US6018486AJan 25, 2000
Reading method and circuit for dynamic memory
SGS THOMSON MICROELECTRONICS7 citations74
US5898622AApr 27, 1999
Read circuit for memory
SGS THOMSON MICROELECTRONICS7 citations74
US4879693ANov 7, 1989
Device for the self-synchronization of the output circuits of a memory using a three-state gate
SGS THOMSON MICROELECTRONICS11 citations74
SOITEC SILICON ON INSULATOR
4 patentsUS8384425B2Feb 26, 2013
Arrays of transistors with back control gates buried beneath the insulating film of a semiconductor-on-insulator substrate
SOITEC SILICON ON INSULATOR9 citations84
US8358552B2Jan 22, 2013
Nano-sense amplifier
SOITEC SILICON ON INSULATOR6 citations84
US9225237B2Dec 29, 2015
Charge pump circuit comprising multiple—gate transistors and method of operating the same
SOITEC SILICON ON INSULATOR4 citations73
US8625374B2Jan 7, 2014
Nano-sense amplifier
SOITEC SILICON ON INSULATOR2 citations63
THOMSON CSF SEMICONDUCTEURS
3 patentsUS5570313AOct 29, 1996
Memory insensitive to disturbances
THOMSON CSF SEMICONDUCTEURS28 citations92
US5410506AApr 25, 1995
Memory integrated circuit with protection against disturbances
THOMSON CSF SEMICONDUCTEURS9 citations73
US5506807AApr 9, 1996
Memory circuit with redundancy
THOMSON CSF SEMICONDUCTEURS15 citations70
FERRANT RICHARD
3 patentsUS9159400B2Oct 13, 2015
Semiconductor memory having staggered sense amplifiers associated with a local column decoder
FERRANT RICHARD8 citations83
US9135964B2Sep 15, 2015
Differential sense amplifier without switch transistors
FERRANT RICHARD10 citations83
US8953399B2Feb 10, 2015
Differential sense amplifier without dedicated pass-gate transistors
FERRANT RICHARD7 citations83
NGUYEN BICH-YEN
2 patentsEUROTECHNIQUE SA
2 patentsINNOVATIVE SILICON ISI SA
1 patentST MICROELECTRONICS INC
1 patentLEUSCHNER RAINER
1 patentS G S THOMSON MICROELECTRONICS
1 patentShowing the top 50 of 79 patents by PatentIndex Score.