Inventor
HERMAN THOMAS
US30 patents
⚠️ This page may combine multiple inventors who share the name “HERMAN THOMAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INT RECTIFIER CORP
25 patentsUS4593302AJun 3, 1986
Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
INT RECTIFIER CORP173 citations99
US4376286AMar 8, 1983
High power MOSFET with low on-resistance and high breakdown voltage
INT RECTIFIER CORP154 citations99
US5742087AApr 21, 1998
High power MOSFET with low on-resistance and high breakdown voltage
INT RECTIFIER CORP90 citations96
US5598018AJan 28, 1997
High power MOSFET with low on-resistance and high breakdown voltage
INT RECTIFIER CORP77 citations96
US5338961AAug 16, 1994
High power MOSFET with low on-resistance and high breakdown voltage
INT RECTIFIER CORP67 citations96
US5191396AMar 2, 1993
High power mosfet with low on-resistance and high breakdown voltage
INT RECTIFIER CORP50 citations96
US5130767AJul 14, 1992
Plural polygon source pattern for mosfet
INT RECTIFIER CORP73 citations96
US5008725AApr 16, 1991
Plural polygon source pattern for MOSFET
INT RECTIFIER CORP102 citations96
US4959699ASep 25, 1990
High power MOSFET with low on-resistance and high breakdown voltage
INT RECTIFIER CORP92 citations96
US4779126AOct 18, 1988
Optically triggered lateral thyristor with auxiliary region
INT RECTIFIER CORP59 citations96
US4705759ANov 10, 1987
High power MOSFET with low on-resistance and high breakdown voltage
INT RECTIFIER CORP98 citations96
US4680853AJul 21, 1987
Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
INT RECTIFIER CORP114 citations96
US4642666AFeb 10, 1987
High power MOSFET with low on-resistance and high breakdown voltage
INT RECTIFIER CORP76 citations96
US4412242AOct 25, 1983
Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
INT RECTIFIER CORP67 citations96
US4399449AAug 16, 1983
Composite metal and polysilicon field plate structure for high voltage semiconductor devices
INT RECTIFIER CORP95 citations96
US7482205B2Jan 27, 2009
Process for resurf diffusion for high voltage MOSFET
INT RECTIFIER CORP19 citations92
US8815715B2Aug 26, 2014
III-nitride wafer fabrication
INT RECTIFIER CORP7 citations84
US6346726B1Feb 12, 2002
Low voltage MOSFET power device having a minimum figure of merit
INT RECTIFIER CORP14 citations84
US7408208B2Aug 5, 2008
III-nitride power semiconductor device
INT RECTIFIER CORP4 citations74
US4535251AAug 13, 1985
A.C. Solid state relay circuit and structure
INT RECTIFIER CORP19 citations73
US7719030B2May 18, 2010
Aluminum alloys for low resistance, ohmic contacts to III-nitride or compound semiconductor
INT RECTIFIER CORP5 citations63
US7180152B2Feb 20, 2007
Process for resurf diffusion for high voltage MOSFET
INT RECTIFIER CORP4 citations63
US7091080B2Aug 15, 2006
Depletion implant for power MOSFET
INT RECTIFIER CORP6 citations63
US6955970B1Oct 18, 2005
Process for manufacturing a low voltage MOSFET power device having a minimum figure of merit
INT RECTIFIER CORP2 citations63
US6781203B2Aug 24, 2004
MOSFET with reduced threshold voltage and on resistance and process for its manufacture
INT RECTIFIER CORP0 citations41