Inventor
RESTAINO DARRYL D
US30 patents
⚠️ This page may combine multiple inventors who share the name “RESTAINO DARRYL D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
26 patentsUS7402532B2Jul 22, 2008
Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layer
IBM28 citations92
US7102232B2Sep 5, 2006
Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layer
IBM19 citations92
US6939797B2Sep 6, 2005
Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereof
IBM26 citations91
US6784485B1Aug 31, 2004
Diffusion barrier layer and semiconductor device containing same
IBM25 citations91
US6737747B2May 18, 2004
Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereof
IBM43 citations91
US6238532B1May 29, 2001
Radio-frequency coil for use in an ionized physical vapor deposition apparatus
IBM22 citations91
US6176931B1Jan 23, 2001
Wafer clamp ring for use in an ionized physical vapor deposition apparatus
IBM28 citations91
US7749892B2Jul 6, 2010
Embedded nano UV blocking and diffusion barrier for improved reliability of copper/ultra low K interlevel dielectric electronic devices
IBM16 citations84
US7067437B2Jun 27, 2006
Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the same
IBM15 citations84
US7202564B2Apr 10, 2007
Advanced low dielectric constant organosilicon plasma chemical vapor deposition films
IBM11 citations83
US6159870ADec 12, 2000
Borophosphosilicate glass incorporated with fluorine for low thermal budget gap fill
IBM16 citations83
US6493078B1Dec 10, 2002
Method and apparatus to improve coating quality
IBM15 citations82
US6638878B2Oct 28, 2003
Film planarization for low-k polymers used in semiconductor structures
IBM10 citations74
US7494938B2Feb 24, 2009
Advanced low dielectric constant organosilicon plasma chemical vapor deposition films
IBM5 citations73
US7407605B2Aug 5, 2008
Manufacturable CoWP metal cap process for copper interconnects
IBM8 citations73
US7820559B2Oct 26, 2010
Structure to improve adhesion between top CVD low-K dielectric and dielectric capping layer
IBM4 citations72
US6726996B2Apr 27, 2004
Laminated diffusion barrier
IBM8 citations69
US7888741B2Feb 15, 2011
Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the same
IBM3 citations63
US7847402B2Dec 7, 2010
BEOL interconnect structures with improved resistance to stress
IBM4 citations63
US7615482B2Nov 10, 2009
Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop layers having increased interfacial and mechanical strength
IBM6 citations61
US6083823AJul 4, 2000
Metal deposition process for metal lines over topography
IBM3 citations57
US7998880B2Aug 16, 2011
Low k dielectric CVD film formation process with in-situ imbedded nanolayers to improve mechanical properties
IBM0 citations51
US7678258B2Mar 16, 2010
Void-free damascene copper deposition process and means of monitoring thereof
IBM1 citations51
US7253106B2Aug 7, 2007
Manufacturable CoWP metal cap process for copper interconnects
IBM1 citations51
US7910484B2Mar 22, 2011
Method for preventing backside defects in dielectric layers formed on semiconductor substrates
IBM1 citations50
US6864180B2Mar 8, 2005
Method for reworking low-k polymers used in semiconductor structures
IBM0 citations49
SAMSUNG ELECTRONICS CO LTD
2 patentsUS7737029B2Jun 15, 2010
Methods of forming metal interconnect structures on semiconductor substrates using oxygen-removing plasmas and interconnect structures formed thereby
SAMSUNG ELECTRONICS CO LTD0 citations52
US7459388B2Dec 2, 2008
Methods of forming dual-damascene interconnect structures using adhesion layers having high internal compressive stresses
SAMSUNG ELECTRONICS CO LTD1 citations45