P

Inventor

RESTAINO DARRYL D

US30 patents
⚠️ This page may combine multiple inventors who share the name “RESTAINO DARRYL D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

26 patents
US7402532B2Jul 22, 2008

Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layer

IBM28 citations92
US7102232B2Sep 5, 2006

Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layer

IBM19 citations92
US6939797B2Sep 6, 2005

Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereof

IBM26 citations91
US6784485B1Aug 31, 2004

Diffusion barrier layer and semiconductor device containing same

IBM25 citations91
US6737747B2May 18, 2004

Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereof

IBM43 citations91
US6238532B1May 29, 2001

Radio-frequency coil for use in an ionized physical vapor deposition apparatus

IBM22 citations91
US6176931B1Jan 23, 2001

Wafer clamp ring for use in an ionized physical vapor deposition apparatus

IBM28 citations91
US7749892B2Jul 6, 2010

Embedded nano UV blocking and diffusion barrier for improved reliability of copper/ultra low K interlevel dielectric electronic devices

IBM16 citations84
US7067437B2Jun 27, 2006

Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the same

IBM15 citations84
US7202564B2Apr 10, 2007

Advanced low dielectric constant organosilicon plasma chemical vapor deposition films

IBM11 citations83
US6159870ADec 12, 2000

Borophosphosilicate glass incorporated with fluorine for low thermal budget gap fill

IBM16 citations83
US6493078B1Dec 10, 2002

Method and apparatus to improve coating quality

IBM15 citations82
US6638878B2Oct 28, 2003

Film planarization for low-k polymers used in semiconductor structures

IBM10 citations74
US7494938B2Feb 24, 2009

Advanced low dielectric constant organosilicon plasma chemical vapor deposition films

IBM5 citations73
US7407605B2Aug 5, 2008

Manufacturable CoWP metal cap process for copper interconnects

IBM8 citations73
US7820559B2Oct 26, 2010

Structure to improve adhesion between top CVD low-K dielectric and dielectric capping layer

IBM4 citations72
US6726996B2Apr 27, 2004

Laminated diffusion barrier

IBM8 citations69
US7888741B2Feb 15, 2011

Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the same

IBM3 citations63
US7847402B2Dec 7, 2010

BEOL interconnect structures with improved resistance to stress

IBM4 citations63
US7615482B2Nov 10, 2009

Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop layers having increased interfacial and mechanical strength

IBM6 citations61
US6083823AJul 4, 2000

Metal deposition process for metal lines over topography

IBM3 citations57
US7998880B2Aug 16, 2011

Low k dielectric CVD film formation process with in-situ imbedded nanolayers to improve mechanical properties

IBM0 citations51
US7678258B2Mar 16, 2010

Void-free damascene copper deposition process and means of monitoring thereof

IBM1 citations51
US7253106B2Aug 7, 2007

Manufacturable CoWP metal cap process for copper interconnects

IBM1 citations51
US7910484B2Mar 22, 2011

Method for preventing backside defects in dielectric layers formed on semiconductor substrates

IBM1 citations50
US6864180B2Mar 8, 2005

Method for reworking low-k polymers used in semiconductor structures

IBM0 citations49

SAMSUNG ELECTRONICS CO LTD

2 patents

SONY CORP

1 patent

HOFFMAN JR WILLIAM K

1 patent