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Inventor

YEN BING K

US35 patents
⚠️ This page may combine multiple inventors who share the name “YEN BING K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

AVALANCHE TECHNOLOGY INC

25 patents
US9793319B2Oct 17, 2017

Multilayered seed structure for perpendicular MTJ memory element

AVALANCHE TECHNOLOGY INC46 citations98
US9780300B2Oct 3, 2017

Magnetic memory element with composite perpendicular enhancement layer

AVALANCHE TECHNOLOGY INC36 citations98
US9070855B2Jun 30, 2015

Magnetic random access memory having perpendicular enhancement layer

AVALANCHE TECHNOLOGY INC40 citations98
US8724380B1May 13, 2014

Method for reading and writing multi-level cells

AVALANCHE TECHNOLOGY INC22 citations92
US10050083B2Aug 14, 2018

Magnetic structure with multilayered seed

AVALANCHE TECHNOLOGY INC11 citations84
US9306154B2Apr 5, 2016

Magnetic random access memory with perpendicular enhancement layer

AVALANCHE TECHNOLOGY INC6 citations84
US9082951B2Jul 14, 2015

Magnetic random access memory with perpendicular enhancement layer

AVALANCHE TECHNOLOGY INC5 citations84
US10217934B2Feb 26, 2019

Method for manufacturing magnetic memory cells

AVALANCHE TECHNOLOGY INC4 citations73
US10177308B2Jan 8, 2019

Method for manufacturing magnetic memory cells

AVALANCHE TECHNOLOGY INC4 citations73
US9831421B2Nov 28, 2017

Magnetic memory element with composite fixed layer

AVALANCHE TECHNOLOGY INC4 citations73
US9627438B1Apr 18, 2017

Three dimensional memory arrays and stitching thereof

AVALANCHE TECHNOLOGY INC5 citations73
US9548448B1Jan 17, 2017

Memory device with increased separation between memory elements

AVALANCHE TECHNOLOGY INC2 citations73
US9123575B1Sep 1, 2015

Semiconductor memory device having increased separation between memory elements

AVALANCHE TECHNOLOGY INC5 citations73
US10593727B2Mar 17, 2020

Magnetic memory cell including two-terminal selector device

AVALANCHE TECHNOLOGY INC4 citations72
US10032979B2Jul 24, 2018

Magnetic memory element with iridium anti-ferromagnetic coupling layer

AVALANCHE TECHNOLOGY INC2 citations70
US10079338B2Sep 18, 2018

Magnetic memory element with perpendicular enhancement layer

AVALANCHE TECHNOLOGY INC1 citations63
US11127787B2Sep 21, 2021

Magnetic memory cell including two-terminal selector device

AVALANCHE TECHNOLOGY INC0 citations62
US11127782B2Sep 21, 2021

Magnetic memory array incorporating selectors and method for manufacturing the same

AVALANCHE TECHNOLOGY INC0 citations62
US10559624B2Feb 11, 2020

Selector device having asymmetric conductance for memory applications

AVALANCHE TECHNOLOGY INC1 citations62
US10347691B2Jul 9, 2019

Magnetic memory element with multilayered seed structure

AVALANCHE TECHNOLOGY INC0 citations52
US9559144B2Jan 31, 2017

Magnetic random access memory element having tantalum perpendicular enhancement layer

AVALANCHE TECHNOLOGY INC0 citations52
US9543506B2Jan 10, 2017

Magnetic random access memory with tri-layer reference layer

AVALANCHE TECHNOLOGY INC0 citations52
US9472595B1Oct 18, 2016

Perpendicular MRAM with magnet

AVALANCHE TECHNOLOGY INC1 citations52
US9444038B2Sep 13, 2016

Magnetic random access memory with nickel/transition metal multilayered seed structure

AVALANCHE TECHNOLOGY INC0 citations52
US9105343B2Aug 11, 2015

Multi-level cells and method for using the same

AVALANCHE TECHNOLOGY INC1 citations52

HITACHI GLOBAL STORAGE TECH

3 patents

SANDISK 3D LLC

2 patents

IBM

2 patents

WESTERN DIGITAL FREMONT LLC

1 patent

APPLIED CELLS INC

1 patent

YEN BING K

1 patent