Inventor
YEN BING K
US35 patents
⚠️ This page may combine multiple inventors who share the name “YEN BING K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AVALANCHE TECHNOLOGY INC
25 patentsUS9793319B2Oct 17, 2017
Multilayered seed structure for perpendicular MTJ memory element
AVALANCHE TECHNOLOGY INC46 citations98
US9780300B2Oct 3, 2017
Magnetic memory element with composite perpendicular enhancement layer
AVALANCHE TECHNOLOGY INC36 citations98
US9070855B2Jun 30, 2015
Magnetic random access memory having perpendicular enhancement layer
AVALANCHE TECHNOLOGY INC40 citations98
US8724380B1May 13, 2014
Method for reading and writing multi-level cells
AVALANCHE TECHNOLOGY INC22 citations92
US10050083B2Aug 14, 2018
Magnetic structure with multilayered seed
AVALANCHE TECHNOLOGY INC11 citations84
US9306154B2Apr 5, 2016
Magnetic random access memory with perpendicular enhancement layer
AVALANCHE TECHNOLOGY INC6 citations84
US9082951B2Jul 14, 2015
Magnetic random access memory with perpendicular enhancement layer
AVALANCHE TECHNOLOGY INC5 citations84
US10217934B2Feb 26, 2019
Method for manufacturing magnetic memory cells
AVALANCHE TECHNOLOGY INC4 citations73
US10177308B2Jan 8, 2019
Method for manufacturing magnetic memory cells
AVALANCHE TECHNOLOGY INC4 citations73
US9831421B2Nov 28, 2017
Magnetic memory element with composite fixed layer
AVALANCHE TECHNOLOGY INC4 citations73
US9627438B1Apr 18, 2017
Three dimensional memory arrays and stitching thereof
AVALANCHE TECHNOLOGY INC5 citations73
US9548448B1Jan 17, 2017
Memory device with increased separation between memory elements
AVALANCHE TECHNOLOGY INC2 citations73
US9123575B1Sep 1, 2015
Semiconductor memory device having increased separation between memory elements
AVALANCHE TECHNOLOGY INC5 citations73
US10593727B2Mar 17, 2020
Magnetic memory cell including two-terminal selector device
AVALANCHE TECHNOLOGY INC4 citations72
US10032979B2Jul 24, 2018
Magnetic memory element with iridium anti-ferromagnetic coupling layer
AVALANCHE TECHNOLOGY INC2 citations70
US10079338B2Sep 18, 2018
Magnetic memory element with perpendicular enhancement layer
AVALANCHE TECHNOLOGY INC1 citations63
US11127787B2Sep 21, 2021
Magnetic memory cell including two-terminal selector device
AVALANCHE TECHNOLOGY INC0 citations62
US11127782B2Sep 21, 2021
Magnetic memory array incorporating selectors and method for manufacturing the same
AVALANCHE TECHNOLOGY INC0 citations62
US10559624B2Feb 11, 2020
Selector device having asymmetric conductance for memory applications
AVALANCHE TECHNOLOGY INC1 citations62
US10347691B2Jul 9, 2019
Magnetic memory element with multilayered seed structure
AVALANCHE TECHNOLOGY INC0 citations52
US9559144B2Jan 31, 2017
Magnetic random access memory element having tantalum perpendicular enhancement layer
AVALANCHE TECHNOLOGY INC0 citations52
US9543506B2Jan 10, 2017
Magnetic random access memory with tri-layer reference layer
AVALANCHE TECHNOLOGY INC0 citations52
US9472595B1Oct 18, 2016
Perpendicular MRAM with magnet
AVALANCHE TECHNOLOGY INC1 citations52
US9444038B2Sep 13, 2016
Magnetic random access memory with nickel/transition metal multilayered seed structure
AVALANCHE TECHNOLOGY INC0 citations52
US9105343B2Aug 11, 2015
Multi-level cells and method for using the same
AVALANCHE TECHNOLOGY INC1 citations52
HITACHI GLOBAL STORAGE TECH
3 patentsUS7018729B2Mar 28, 2006
Energy gradient ion beam deposition of carbon overcoats on rigid disk media for magnetic recordings
HITACHI GLOBAL STORAGE TECH41 citations92
US7758982B2Jul 20, 2010
SiN overcoat for perpendicular magnetic recording media
HITACHI GLOBAL STORAGE TECH3 citations63
US6902773B1Jun 7, 2005
Energy gradient ion beam deposition of carbon overcoats on rigid disk media for magnetic recordings
HITACHI GLOBAL STORAGE TECH4 citations62