Inventor
FAYNOT OLIVIER
FR4 patents
Patents
4 patentsUS7763915B2Jul 27, 2010
Three-dimensional integrated C-MOS circuit and method for producing same
COMMISSARIAT ENERGIE ATOMIQUE2 citations60
US7732282B2Jun 8, 2010
Transistor of the I-MOS type comprising two independent gates and method of using such a transistor
COMMISSARIAT ENERGIE ATOMIQUE4 citations60
US8877618B2Nov 4, 2014
Method for producing a field effect transistor with a SiGe channel by ion implantation
COMMISSARIAT ENERGIE ATOMIQUE0 citations50
US7579226B2Aug 25, 2009
Thin layer element and associated fabrication process
COMMISSARIAT ENERGIE ATOMIQUE0 citations49