Inventor
ZHANG SHOUYIN
US17 patents
⚠️ This page may combine multiple inventors who share the name “ZHANG SHOUYIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
6 patentsUS11810770B2Nov 7, 2023
Methods and apparatus for controlling ion fraction in physical vapor deposition processes
APPLIED MATERIALS INC2 citations73
US11037768B2Jun 15, 2021
Methods and apparatus for controlling ion fraction in physical vapor deposition processes
APPLIED MATERIALS INC4 citations73
US10157733B2Dec 18, 2018
Methods for igniting a plasma in a substrate processing chamber
APPLIED MATERIALS INC2 citations72
US12094699B2Sep 17, 2024
Methods and apparatus for controlling ion fraction in physical vapor deposition processes
APPLIED MATERIALS INC0 citations62
US12281381B2Apr 22, 2025
Methods and apparatus for processing a substrate
APPLIED MATERIALS INC0 citations52
US12018361B2Jun 25, 2024
Waveform shape factor for pulsed PVD power
APPLIED MATERIALS INC0 citations51
FEI CO
4 patentsUS9818584B2Nov 14, 2017
Internal split faraday shield for a plasma source
FEI CO21 citations93
US9691583B2Jun 27, 2017
Imaging and processing for plasma ion source
FEI CO0 citations51
US9105438B2Aug 11, 2015
Imaging and processing for plasma ion source
FEI CO0 citations51
US9530625B2Dec 27, 2016
Method for attachment of an electrode into an inductively-coupled plasma
FEI CO0 citations48
ZHANG SHOUYIN
4 patentsUS8253118B2Aug 28, 2012
Charged particle beam system having multiple user-selectable operating modes
ZHANG SHOUYIN32 citations91
US8445870B2May 21, 2013
Charged particle beam system having multiple user-selectable operating modes
ZHANG SHOUYIN14 citations79
US8736177B2May 27, 2014
Compact RF antenna for an inductively coupled plasma ion source
ZHANG SHOUYIN3 citations60
US9196451B2Nov 24, 2015
Plasma source for charged particle beam system
ZHANG SHOUYIN0 citations39