Inventor

LEE CHANGHYUN

KR91 patents

⚠️ This page may combine multiple inventors who share the name “LEE CHANGHYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEE CHANGHYUN

SAMSUNG ELECTRONICS CO LTD

Method and apparatus for managing electronic device through wireless communication

3-Dimensional semiconductor memory device and operating method thereof

Three-dimensional semiconductor device with vertical and horizontal channels in stack structure having electrodes vertically stacked on the substrate

Nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings therein

Method and apparatus for controlling temperature adjustment device

Three-dimensional semiconductor memory devices

Three-dimensional semiconductor devices

Nonvolatile memory devices and methods forming the same

Nonvolatile memory device and driving method thereof

String selection structure of three-dimensional semiconductor device

Three-dimensional semiconductor device with vertical and horizontal channels in stack structure having electrodes vertically stacked on the substrate

Three-dimensional semiconductor memory devices

Three-dimensional semiconductor memory devices

Semiconductor device including a stack having a sidewall with recessed and protruding portions

Semiconductor device including a stack having a sidewall with recessed and protruding portions

Three-dimensional semiconductor memory device

Method of forming nonvolatile memory device

LEE CHANGHYUN

Methods of forming nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings therein

Three-dimensional semiconductor memory devices

Nonvolatile memory device, programming method thereof and memory system including the same

Nonvolatile memory devices and methods forming the same

Nonvolatile memory device and read method thereof

Nonvolatile memory device and read method thereof

Nonvolatile memory device and driving method thereof

Three-dimensional semiconductor devices and methods of fabricating the same

Nonvolatile memory device and erase method thereof

Nonvolatile memory device and read method thereof

Nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings therein

Memory system and programming method thereof

Nonvolatile memory device and read method thereof

Nonvolatile memory device in three-dimensional structure with a stress reducing materials on the channel

Three-dimensional semiconductor memory device

Three-dimensional semiconductor memory device

MICRON TECHNOLOGY INC

Memory device including multiple select gates and different bias conditions

Memory device including multiple select gates and different bias conditions

Integrated structures

Integrated structures comprising charge-storage regions along outer portions of vertically-extending channel material

Integrated structures

Integrated structures comprising charge-storage regions along outer portions of vertically-extending channel material

Programming multiple-level memory cells with multiple-pass

Memory device including multiple select gates and different bias conditions

Memory device including multiple select gates and different bias conditions

SON BYOUNGKEUN

Nonvolatile memory device and method of forming the same

Semiconductor device including a stack having a sidewall with recessed and protruding portions

Semiconductor device including a stack having a sidewall with recessed and protruding portions

YANGTZE MEMORY TECH CO LTD

Erasing method for 3D NAND flash memory

Architecture and method for NAND memory operation

CHANG SUNG-IL

Three-dimensional semiconductor devices

PARK HANGIL

Apparatus for removing parking state of shift-by-wire shifting device

INTEL CORP

Selective body reset operation for three dimensional (3D) NAND memory