Inventor
HAN JINMAN
KR35 patents
⚠️ This page may combine multiple inventors who share the name “HAN JINMAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HAN JINMAN
11 patentsUS8553466B2Oct 8, 2013
Non-volatile memory device, erasing method thereof, and memory system including the same
HAN JINMAN815 citations98
US8559224B2Oct 15, 2013
Nonvolatile memory device, operating method thereof, and memory system including the same
HAN JINMAN36 citations94
US8917558B2Dec 23, 2014
Nonvolatile memory devices, operating methods thereof and memory systems including the same
HAN JINMAN12 citations92
US9378831B2Jun 28, 2016
Nonvolatile memory devices, operating methods thereof and memory systems including the same
HAN JINMAN13 citations84
US8976584B2Mar 10, 2015
Flash memory device and method of programming the same
HAN JINMAN14 citations84
US8923053B2Dec 30, 2014
Nonvolatile memory device, operating method thereof, and memory system including the same
HAN JINMAN12 citations84
US8427871B2Apr 23, 2013
Nonvolatile memory device, memory system incorporating same, and method of operating same
HAN JINMAN17 citations84
US8848456B2Sep 30, 2014
Nonvolatile memory device, erasing method thereof, and memory system including the same
HAN JINMAN7 citations83
US10217516B2Feb 26, 2019
Nonvolatile memory devices, operating methods thereof and memory systems including the same
HAN JINMAN1 citations73
US9330769B2May 3, 2016
Nonvolatile memory devices, operating methods thereof and memory systems including the same
HAN JINMAN3 citations73
US8588002B2Nov 19, 2013
Nonvolatile memory devices and programming methods thereof in which a program inhibit voltage is changed during programming
HAN JINMAN1 citations52
SAMSUNG ELECTRONICS CO LTD
10 patentsUS8355280B2Jan 15, 2013
Data storage system having multi-bit memory device and operating method thereof
SAMSUNG ELECTRONICS CO LTD22 citations92
US9032272B2May 12, 2015
Memory systems and block copy methods thereof
SAMSUNG ELECTRONICS CO LTD7 citations84
US9263105B2Feb 16, 2016
Memory systems including an input/output buffer circuit
SAMSUNG ELECTRONICS CO LTD9 citations83
US8355279B2Jan 15, 2013
Nonvolatile memory device and system, and method of programming a nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD12 citations83
US9564234B2Feb 7, 2017
Sequentially accessing memory cells in a memory device
SAMSUNG ELECTRONICS CO LTD6 citations73
US9280420B2Mar 8, 2016
Memory systems and block copy methods thereof
SAMSUNG ELECTRONICS CO LTD3 citations73
US9224489B2Dec 29, 2015
Flash memory devices having multi-bit memory cells therein with improved read reliability
SAMSUNG ELECTRONICS CO LTD5 citations73
US9378833B2Jun 28, 2016
Nonvolatile memory devices, operating methods thereof and memory systems including the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US8964468B2Feb 24, 2015
Data storage system having multi-bit memory device and operating method thereof
SAMSUNG ELECTRONICS CO LTD1 citations52
US10134476B2Nov 20, 2018
Memory system using non-linear filtering scheme and read method thereof
SAMSUNG ELECTRONICS CO LTD0 citations51
LEE CHANGHYUN
2 patentsPARK KITAE
2 patentsUS8305817B2Nov 6, 2012
Nonvolatile memory devices and program methods thereof in which a target verify operation and a pre-pass verify operation are performed simultaneously using a common verify voltage
PARK KITAE25 citations92
US8284603B2Oct 9, 2012
Memory devices and operations thereof using program state determination based on data value distribution
PARK KITAE3 citations62