Inventor
BAKER JR FRANK K
US33 patents
⚠️ This page may combine multiple inventors who share the name “BAKER JR FRANK K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
15 patentsUS9520173B1Dec 13, 2016
Magnetic random access memory (MRAM) and method of operation
FREESCALE SEMICONDUCTOR INC23 citations92
US6828618B2Dec 7, 2004
Split-gate thin-film storage NVM cell
FREESCALE SEMICONDUCTOR INC26 citations92
US6751125B2Jun 15, 2004
Gate voltage reduction in a memory read
FREESCALE SEMICONDUCTOR INC37 citations92
US9276008B2Mar 1, 2016
Embedded NVM in a HKMG process
FREESCALE SEMICONDUCTOR INC6 citations84
US7764550B2Jul 27, 2010
Method of programming a non-volatile memory
FREESCALE SEMICONDUCTOR INC8 citations82
US7269090B2Sep 11, 2007
Memory access with consecutive addresses corresponding to different rows
FREESCALE SEMICONDUCTOR INC9 citations74
US9792981B2Oct 17, 2017
Memory with read circuitry and method of operating
FREESCALE SEMICONDUCTOR INC2 citations73
US9779807B2Oct 3, 2017
Non-volatile memory using bi-directional resistive elements
FREESCALE SEMICONDUCTOR INC2 citations73
US9530501B2Dec 27, 2016
Non-volatile static random access memory (NVSRAM) having a shared port
FREESCALE SEMICONDUCTOR INC5 citations73
US9401207B2Jul 26, 2016
Pseudo SRAM using resistive elements for non-volatile storage
FREESCALE SEMICONDUCTOR INC5 citations73
US9054220B2Jun 9, 2015
Embedded NVM in a HKMG process
FREESCALE SEMICONDUCTOR INC5 citations73
US9378812B2Jun 28, 2016
Non-volatile memory using bi-directional resistive elements
FREESCALE SEMICONDUCTOR INC2 citations63
US6898129B2May 24, 2005
Erase of a memory having a non-conductive storage medium
FREESCALE SEMICONDUCTOR INC5 citations62
US9734905B2Aug 15, 2017
Non-volatile memory using bi-directional resistive elements
FREESCALE SEMICONDUCTOR INC1 citations52
US7432547B2Oct 7, 2008
Non-volatile memory device with improved data retention and method therefor
FREESCALE SEMICONDUCTOR INC0 citations52
HALL MARK D
6 patentsUS8524557B1Sep 3, 2013
Integration technique using thermal oxide select gate dielectric for select gate and replacement gate for logic
HALL MARK D34 citations92
US8716089B1May 6, 2014
Integrating formation of a replacement gate transistor and a non-volatile memory cell having thin film storage
HALL MARK D18 citations84
US9087913B2Jul 21, 2015
Integration technique using thermal oxide select gate dielectric for select gate and apartial replacement gate for logic
HALL MARK D4 citations73
US8741719B1Jun 3, 2014
Integrating formation of a logic transistor and a non-volatile memory cell using a partial replacement gate technique
HALL MARK D3 citations63
US8669158B2Mar 11, 2014
Non-volatile memory (NVM) and logic integration
HALL MARK D1 citations52
US8951863B2Feb 10, 2015
Non-volatile memory (NVM) and logic integration
HALL MARK D0 citations42
BAKER JR FRANK K
3 patentsUS9318158B2Apr 19, 2016
Non-volatile memory using bi-directional resistive elements
BAKER JR FRANK K11 citations83
US9129996B2Sep 8, 2015
Non-volatile memory (NVM) cell and high-K and metal gate transistor integration
BAKER JR FRANK K9 citations82
US9666276B2May 30, 2017
Non-volatile memory using bi-directional resistive elements
BAKER JR FRANK K2 citations71