Inventor

CHANG KO-MIN

US42 patents

⚠️ This page may combine multiple inventors who share the name “CHANG KO-MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHANG KO-MIN

MOTOROLA INC

Process for forming an electrically programmable read-only memory cell

Cross-point eeprom memory array

Split-gate memory device and method for accessing the same

Static random access memory cell having a thin film transistor (TFT) pass gate connection to a bit line

Nonvolatile memory with enhanced carrier generation and method for programming the same

Nonvolatile memory process

EEPROM cell with isolation transistor and methods for making and operating the same

Method for making an EEPROM cell with isolation transistor

Method for operating a memory array

Nonvolatile memory having overerase protection

Process for fabricating an EEPROM cell having a tunnel opening which overlaps field isolation regions

Apparatus and method for erasing a flash EEPROM

Integrated circuit having a jet vapor deposition silicon nitride film and method of making the same

Process for fabricating a graded-channel MOS device

Zener regulated programming circuit for a nonvolatile memory

Nonvolatile memory cell

Process for fabricating a non-volatile memory cell in a semiconductor device

FREESCALE SEMICONDUCTOR INC

Multi-bit non-volatile integrated circuit memory and method therefor

Program and erase in a thin film storage non-volatile memory

Method of making self-aligned split gate memory cell

Split-gate thin film storage NVM cell with reduced load-up/trap-up effects

Non-volatile memory

Silicided nonvolatile memory and method of making same

Method of forming a semiconductor device and structure thereof

Method for forming a non-volatile memory and a peripheral device on a semiconductor substrate

Structures for split gate memory cell scaling with merged control gates

Process for forming an electronic device including discontinuous storage elements

Electronic device including discontinuous storage elements

ReRAM device structure

Method for simulating long-term performance of a non-volatile memory by exposing the non-volatile memory to heavy-ion radiation

ZHOU FENG

Field focusing features in a ReRAM cell

Field focusing features in a ReRAM cell

Field focusing features in a ReRAM cell

Resistive random access memory (RAM) cell and method for forming

(unassigned)

Memory cell having a plural transistor transmission gate and method of formation

HERRICK MATTHEW T

Method of making a split gate memory cell

PERERA ASANGA H

Methods and structures for charge storage isolation in split-gate memory arrays

WINSTEAD BRIAN A

Split gate memory cell with a layer of nanocrystals with improved erase performance

ROY ANIRBAN

Methods and structures for split gate memory cell scaling with merged control gates

HONG CHEONG MIN

ReRAM device structure

NXP BV

User interface activation

SHEN JINMIAO J

Split gate memory device with gap spacer