Inventor
KWON UNOH
US94 patents
⚠️ This page may combine multiple inventors who share the name “KWON UNOH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
24 patentsUS7838908B2Nov 23, 2010
Semiconductor device having dual metal gates and method of manufacture
IBM28 citations93
US9613866B2Apr 4, 2017
Gate stack formed with interrupted deposition processes and laser annealing
IBM11 citations92
US9613870B2Apr 4, 2017
Gate stack formed with interrupted deposition processes and laser annealing
IBM13 citations92
US9330938B2May 3, 2016
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme
IBM12 citations92
US9515164B2Dec 6, 2016
Methods and structure to form high K metal gate stack with single work-function metal
IBM7 citations84
US9231072B2Jan 5, 2016
Multi-composition gate dielectric field effect transistors
IBM10 citations84
US9105745B2Aug 11, 2015
Fabrication of low threshold voltage and inversion oxide thickness scaling for a high-k metal gate p-type MOSFET
IBM13 citations84
US8912607B2Dec 16, 2014
Replacement metal gate structures providing independent control on work function and gate leakage current
IBM11 citations84
US8354313B2Jan 15, 2013
Method to optimize work function in complementary metal oxide semiconductor (CMOS) structures
IBM8 citations84
US9224826B2Dec 29, 2015
Multiple thickness gate dielectrics for replacement gate field effect transistors
IBM6 citations83
US7691701B1Apr 6, 2010
Method of forming gate stack and structure thereof
IBM16 citations83
US9824930B2Nov 21, 2017
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme
IBM3 citations73
US9799656B2Oct 24, 2017
Semiconductor device having a gate stack with tunable work function
IBM3 citations73
US9583400B1Feb 28, 2017
Gate stack with tunable work function
IBM3 citations73
US9087722B2Jul 21, 2015
Semiconductor devices having different gate oxide thicknesses
IBM4 citations72
US11031301B2Jun 8, 2021
Gate formation scheme for n-type and p-type transistors having separately tuned threshold voltages
IBM0 citations63
US10985075B2Apr 20, 2021
Gate formation scheme for n-type and p-type transistors having separately tuned threshold voltages
IBM1 citations63
US10354999B2Jul 16, 2019
Structure and method to suppress work function effect by patterning boundary proximity in replacement metal gate
IBM1 citations63
US9997361B2Jun 12, 2018
Gate stack formed with interrupted deposition processes and laser annealing
IBM1 citations63
US9997610B2Jun 12, 2018
Gate stack formed with interrupted deposition processes and laser annealing
IBM1 citations63
US9721842B2Aug 1, 2017
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme
IBM1 citations63
US9087784B2Jul 21, 2015
Structure and method of Tinv scaling for high k metal gate technology
IBM2 citations63
US9059313B2Jun 16, 2015
Replacement gate having work function at valence band edge
IBM2 citations63
US8809176B2Aug 19, 2014
Replacement gate with reduced gate leakage current
IBM2 citations63
GLOBALFOUNDRIES INC
11 patentsUS9748145B1Aug 29, 2017
Semiconductor devices with varying threshold voltage and fabrication methods thereof
GLOBALFOUNDRIES INC494 citations99
US9343372B1May 17, 2016
Metal stack for reduced gate resistance
GLOBALFOUNDRIES INC23 citations92
US9905476B2Feb 27, 2018
Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETs
GLOBALFOUNDRIES INC9 citations84
US9589806B1Mar 7, 2017
Integrated circuit with replacement gate stacks and method of forming same
GLOBALFOUNDRIES INC10 citations84
US9553092B2Jan 24, 2017
Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETs
GLOBALFOUNDRIES INC15 citations84
US9548381B1Jan 17, 2017
Method and structure for III-V nanowire tunnel FETs
GLOBALFOUNDRIES INC11 citations84
US9484427B2Nov 1, 2016
Field effect transistors having multiple effective work functions
GLOBALFOUNDRIES INC7 citations84
US9397199B1Jul 19, 2016
Methods of forming multi-Vt III-V TFET devices
GLOBALFOUNDRIES INC14 citations84
US9660027B2May 23, 2017
Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistor
GLOBALFOUNDRIES INC2 citations73
US9627508B2Apr 18, 2017
Replacement channel TFET
GLOBALFOUNDRIES INC3 citations73
US9293461B2Mar 22, 2016
Replacement metal gate structures for effective work function control
GLOBALFOUNDRIES INC4 citations73
ANDO TAKASHI
6 patentsUS8647972B1Feb 11, 2014
Multi-layer work function metal replacement gate
ANDO TAKASHI40 citations93
US8581351B2Nov 12, 2013
Replacement gate with reduced gate leakage current
ANDO TAKASHI10 citations84
US8420473B2Apr 16, 2013
Replacement gate devices with barrier metal for simultaneous processing
ANDO TAKASHI18 citations84
US8659077B1Feb 25, 2014
Multi-layer work function metal replacement gate
ANDO TAKASHI6 citations83
US8735996B2May 27, 2014
Scavenging metal stack for a high-K gate dielectric
ANDO TAKASHI4 citations73
US8716118B2May 6, 2014
Replacement gate structure for transistor with a high-K gate stack
ANDO TAKASHI4 citations73
KWON UNOH
2 patentsLI ZHENGWEN
2 patentsBREIL NICOLAS
1 patentUTOMO HENRY K
1 patentADAMS CHARLOTTE DEWAN
1 patentCHUDZIK MICHAEL P
1 patentGUO DECHAO
1 patentShowing the top 50 of 94 patents by PatentIndex Score.