Inventor
SU ANNA
CN14 patents
⚠️ This page may combine multiple inventors who share the name “SU ANNA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
OTIS ELEVATOR CO
9 patentsUS10173864B2Jan 8, 2019
System of monitoring handrail for a passenger conveyer device, a passenger conveyer device and monitoring method thereof
OTIS ELEVATOR CO6 citations83
US10479653B2Nov 19, 2019
Monitoring system of a passenger conveyor, a passenger conveyor, and a monitoring method thereof
OTIS ELEVATOR CO4 citations72
US10364130B2Jul 30, 2019
Speed detection system of passenger conveyor and speed detection method thereof
OTIS ELEVATOR CO3 citations72
US10214391B2Feb 26, 2019
System and method for monitoring handrail entrance of passenger conveyor
OTIS ELEVATOR CO4 citations72
US10071884B2Sep 11, 2018
Detection of state of engagement between step and comb plate of passenger conveyor
OTIS ELEVATOR CO4 citations72
US10183843B2Jan 22, 2019
Monitoring of step rollers and maintenance mechanics of passenger conveyors
OTIS ELEVATOR CO2 citations71
US10059569B2Aug 28, 2018
Monitoring system of a passenger conveyor, a passenger conveyor, and a monitoring method thereof
OTIS ELEVATOR CO5 citations71
US10221046B2Mar 5, 2019
System of monitoring handrail for a passenger conveyer device, a passenger conveyer device and monitoring method thereof
OTIS ELEVATOR CO0 citations51
US10282847B2May 7, 2019
Monitoring system of a passenger conveyor and monitoring method thereof
OTIS ELEVATOR CO0 citations41
UNITED MICROELECTRONICS CORP
4 patentsUS5308786AMay 3, 1994
Trench isolation for both large and small areas by means of silicon nodules after metal etching
UNITED MICROELECTRONICS CORP64 citations95
US5372968ADec 13, 1994
Planarized local oxidation by trench-around technology
UNITED MICROELECTRONICS CORP30 citations90
US5465003ANov 7, 1995
Planarized local oxidation by trench-around technology
UNITED MICROELECTRONICS CORP18 citations79
US5674354AOct 7, 1997
Method for etching a conducting layer of the step-covered structure for semiconductor fabrication
UNITED MICROELECTRONICS CORP1 citations52