Inventor
NAKAI TETSUYA
JP24 patents
⚠️ This page may combine multiple inventors who share the name “NAKAI TETSUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SUMCO CORP
8 patentsUS7943497B2May 17, 2011
Method for manufacturing an SOI substrate
SUMCO CORP23 citations92
US7537989B2May 26, 2009
Method for manufacturing SOI substrate
SUMCO CORP9 citations83
US7632735B2Dec 15, 2009
Process for manufacturing silicon-on-insulator substrate
SUMCO CORP2 citations63
US7811878B2Oct 12, 2010
Method of manufacturing SOI substrate
SUMCO CORP2 citations62
US7807545B2Oct 5, 2010
Method for manufacturing SIMOX wafer
SUMCO CORP2 citations62
US7655315B2Feb 2, 2010
SOI substrate, silicon substrate therefor and it's manufacturing method
SUMCO CORP5 citations62
US7514343B2Apr 7, 2009
Method for manufacturing SIMOX wafer and SIMOX wafer
SUMCO CORP3 citations62
US7838387B2Nov 23, 2010
Method for manufacturing SOI wafer
SUMCO CORP0 citations41
KOKUSAI DENSHIN DENWA CO LTD
6 patentsUS4810054AMar 7, 1989
Fusion splicing method for optical fibers
KOKUSAI DENSHIN DENWA CO LTD57 citations95
US5349600ASep 20, 1994
Solid state laser
KOKUSAI DENSHIN DENWA CO LTD49 citations92
US4729777AMar 8, 1988
Method and apparatus for manufacturing preform for fluoride glass fiber
KOKUSAI DENSHIN DENWA CO LTD36 citations91
US4674835AJun 23, 1987
Fluoride glass optical fiber
KOKUSAI DENSHIN DENWA CO LTD23 citations81
US5708752AJan 13, 1998
Fluoride optical fiber for high power laser transmission
KOKUSAI DENSHIN DENWA CO LTD7 citations73
US4597786AJul 1, 1986
Purifying process of fluoride glass
KOKUSAI DENSHIN DENWA CO LTD15 citations72
MITSUBISHI ELECTRIC CORP
4 patentsUS5441899AAug 15, 1995
Method of manufacturing substrate having semiconductor on insulator
MITSUBISHI ELECTRIC CORP41 citations92
US5891265AApr 6, 1999
SOI substrate having monocrystal silicon layer on insulating film
MITSUBISHI ELECTRIC CORP44 citations91
US5741717AApr 21, 1998
Method of manufacturing a SOI substrate having a monocrystalline silicon layer on insulating film
MITSUBISHI ELECTRIC CORP23 citations91
US5616507AApr 1, 1997
Method of manufacturing substrate having semiconductor on insulator
MITSUBISHI ELECTRIC CORP14 citations74