Inventor

HATCHER RYAN M

US23 patents

⚠️ This page may combine multiple inventors who share the name “HATCHER RYAN M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HATCHER RYAN M

SAMSUNG ELECTRONICS CO LTD

Integrated circuit devices including source/drain extension regions and methods of forming the same

Strained stacked nanosheet FETS and/or quantum well stacked nanosheet

Method and system for performing analog complex vector-matrix multiplication

Multi-bit, SoC-compatible neuromorphic weight cell using ferroelectric FETs

Stacked independently contacted field effect transistor having electrically separated first and second gates

Ferroelectric-based memory cell usable in on-logic chip memory

Selectorless 3D stackable memory

Confined semi-metal field effect transistor

Unipolar complementary logic

0T bi-directional memory cell

Method of enabling sparse neural networks on memresistive accelerators

Multi-bit, SoC-compatible neuromorphic weight cell using ferroelectric FETs

Method and system for training of neural networks using continuously differentiable models

4T4R ternary weight cell with high on/off ratio background

Bi-directional weight cell

Memory device with strong polarization coupling

FE-FET-based XNOR cell usable in neuromorphic computing

Method and system for providing a variation resistant magnetic junction-based XNOR cell usable in neuromorphic computing

Integrated circuit devices including strained channel regions and methods of forming the same

Composite piezoelectric capacitor

2T2R binary weight cell with high on/off ratio background

Variation resistant 3T3R binary weight cell with low output current and high on/off ratio

OBRADOVIC BORNA J

FinFET devices including recessed source/drain regions having optimized depths