Inventor
MOSDEN AELAN
US29 patents
⚠️ This page may combine multiple inventors who share the name “MOSDEN AELAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
26 patentsUS7226868B2Jun 5, 2007
Method of etching high aspect ratio features
TOKYO ELECTRON LTD45 citations91
US7097779B2Aug 29, 2006
Processing system and method for chemically treating a TERA layer
TOKYO ELECTRON LTD14 citations84
US11424120B2Aug 23, 2022
Plasma etching techniques
TOKYO ELECTRON LTD7 citations82
US7959970B2Jun 14, 2011
System and method of removing chamber residues from a plasma processing system in a dry cleaning process
TOKYO ELECTRON LTD12 citations78
US10923356B2Feb 16, 2021
Gas phase etch with controllable etch selectivity of silicon-germanium alloys
TOKYO ELECTRON LTD2 citations73
US9984890B2May 29, 2018
Isotropic silicon and silicon-germanium etching with tunable selectivity
TOKYO ELECTRON LTD6 citations73
US9748110B2Aug 29, 2017
Method and system for selective spacer etch for multi-patterning schemes
TOKYO ELECTRON LTD4 citations72
US11538690B2Dec 27, 2022
Plasma etching techniques
TOKYO ELECTRON LTD5 citations71
US10971372B2Apr 6, 2021
Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masks
TOKYO ELECTRON LTD2 citations71
US10573564B2Feb 25, 2020
Method for fabricating NFET and PFET nanowire devices
TOKYO ELECTRON LTD5 citations69
US11322350B2May 3, 2022
Non-plasma etch of titanium-containing material layers with tunable selectivity to alternate metals and dielectrics
TOKYO ELECTRON LTD0 citations62
US7291446B2Nov 6, 2007
Method and system for treating a hard mask to improve etch characteristics
TOKYO ELECTRON LTD6 citations62
US11538691B2Dec 27, 2022
Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masks
TOKYO ELECTRON LTD0 citations61
US11380554B2Jul 5, 2022
Gas phase etching system and method
TOKYO ELECTRON LTD0 citations61
US11715643B2Aug 1, 2023
Gas phase etch with controllable etch selectivity of metals
TOKYO ELECTRON LTD0 citations60
US11482423B2Oct 25, 2022
Plasma etching techniques
TOKYO ELECTRON LTD1 citations60
US12002683B2Jun 4, 2024
Lateral etching of silicon
TOKYO ELECTRON LTD1 citations59
US11837467B2Dec 5, 2023
Plasma etching techniques
TOKYO ELECTRON LTD1 citations59
US11189499B2Nov 30, 2021
Atomic layer etch (ALE) of tungsten or other metal layers
TOKYO ELECTRON LTD0 citations59
US12593634B2Mar 31, 2026
Selective gas phase etch of silicon germanium alloys
TOKYO ELECTRON LTD0 citations58
US12575353B2Mar 10, 2026
Method for lateral etch with bottom passivation
TOKYO ELECTRON LTD0 citations57
US10290553B2May 14, 2019
System and method of determining process completion of post heat treatment of a dry etch process
TOKYO ELECTRON LTD1 citations53
US10580660B2Mar 3, 2020
Gas phase etching system and method
TOKYO ELECTRON LTD0 citations51
US12512327B2Dec 30, 2025
Surface modification to achieve selective isotropic etch
TOKYO ELECTRON LTD0 citations47
US12272558B2Apr 8, 2025
Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modification
TOKYO ELECTRON LTD0 citations47
US10600687B2Mar 24, 2020
Process integration techniques using a carbon layer to form self-aligned structures
TOKYO ELECTRON LTD0 citations41
O'MEARA DAVID L
3 patentsUS8673725B2Mar 18, 2014
Multilayer sidewall spacer for seam protection of a patterned structure
O'MEARA DAVID L15 citations83
US8809169B2Aug 19, 2014
Multi-layer pattern for alternate ALD processes
O'MEARA DAVID L6 citations72
US8664102B2Mar 4, 2014
Dual sidewall spacer for seam protection of a patterned structure
O'MEARA DAVID L1 citations51