P

Inventor

MOSDEN AELAN

US29 patents
⚠️ This page may combine multiple inventors who share the name “MOSDEN AELAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOKYO ELECTRON LTD

26 patents
US7226868B2Jun 5, 2007

Method of etching high aspect ratio features

TOKYO ELECTRON LTD45 citations91
US7097779B2Aug 29, 2006

Processing system and method for chemically treating a TERA layer

TOKYO ELECTRON LTD14 citations84
US11424120B2Aug 23, 2022

Plasma etching techniques

TOKYO ELECTRON LTD7 citations82
US7959970B2Jun 14, 2011

System and method of removing chamber residues from a plasma processing system in a dry cleaning process

TOKYO ELECTRON LTD12 citations78
US10923356B2Feb 16, 2021

Gas phase etch with controllable etch selectivity of silicon-germanium alloys

TOKYO ELECTRON LTD2 citations73
US9984890B2May 29, 2018

Isotropic silicon and silicon-germanium etching with tunable selectivity

TOKYO ELECTRON LTD6 citations73
US9748110B2Aug 29, 2017

Method and system for selective spacer etch for multi-patterning schemes

TOKYO ELECTRON LTD4 citations72
US11538690B2Dec 27, 2022

Plasma etching techniques

TOKYO ELECTRON LTD5 citations71
US10971372B2Apr 6, 2021

Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masks

TOKYO ELECTRON LTD2 citations71
US10573564B2Feb 25, 2020

Method for fabricating NFET and PFET nanowire devices

TOKYO ELECTRON LTD5 citations69
US11322350B2May 3, 2022

Non-plasma etch of titanium-containing material layers with tunable selectivity to alternate metals and dielectrics

TOKYO ELECTRON LTD0 citations62
US7291446B2Nov 6, 2007

Method and system for treating a hard mask to improve etch characteristics

TOKYO ELECTRON LTD6 citations62
US11538691B2Dec 27, 2022

Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masks

TOKYO ELECTRON LTD0 citations61
US11380554B2Jul 5, 2022

Gas phase etching system and method

TOKYO ELECTRON LTD0 citations61
US11715643B2Aug 1, 2023

Gas phase etch with controllable etch selectivity of metals

TOKYO ELECTRON LTD0 citations60
US11482423B2Oct 25, 2022

Plasma etching techniques

TOKYO ELECTRON LTD1 citations60
US12002683B2Jun 4, 2024

Lateral etching of silicon

TOKYO ELECTRON LTD1 citations59
US11837467B2Dec 5, 2023

Plasma etching techniques

TOKYO ELECTRON LTD1 citations59
US11189499B2Nov 30, 2021

Atomic layer etch (ALE) of tungsten or other metal layers

TOKYO ELECTRON LTD0 citations59
US12593634B2Mar 31, 2026

Selective gas phase etch of silicon germanium alloys

TOKYO ELECTRON LTD0 citations58
US12575353B2Mar 10, 2026

Method for lateral etch with bottom passivation

TOKYO ELECTRON LTD0 citations57
US10290553B2May 14, 2019

System and method of determining process completion of post heat treatment of a dry etch process

TOKYO ELECTRON LTD1 citations53
US10580660B2Mar 3, 2020

Gas phase etching system and method

TOKYO ELECTRON LTD0 citations51
US12512327B2Dec 30, 2025

Surface modification to achieve selective isotropic etch

TOKYO ELECTRON LTD0 citations47
US12272558B2Apr 8, 2025

Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modification

TOKYO ELECTRON LTD0 citations47
US10600687B2Mar 24, 2020

Process integration techniques using a carbon layer to form self-aligned structures

TOKYO ELECTRON LTD0 citations41

O'MEARA DAVID L

3 patents