Inventor

WENG TZU-CHAN

TW37 patents

⚠️ This page may combine multiple inventors who share the name “WENG TZU-CHAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WENG TZU-CHAN

TAIWAN SEMICONDUCTOR MFG CO LTD

FinFET device and method of forming same

Intermetallic doping film with diffusion in source/drain

FinFET device and method of forming same

Source and drain structure with reduced contact resistance and enhanced mobility

FinFET device and method of forming same

Methods of forming recesses in substrates by etching dummy Fins

Integrated circuit structure having crown-shaped semiconductor strips and recesses in the substrate from etched dummy fins

Source and drain structure with reduced contact resistance and enhanced mobility

System and method for selective nitride etch

Semiconductor device and method

Heat shield for chamber door and devices manufactured using same

Method for forming recesses in a substrate by etching dummy fins

Method of manufacturing a semiconductor device and a semiconductor device

Method of manufacturing a semiconductor device and a semiconductor device

Method for forming recesses in a substrate by etching dummy fins

Semiconductor device and method

Fin field-effect transistor device and method of forming

Method of manufacturing a semiconductor device including etching polysilicon

Fin field-effect transistor device and method of forming

Method of manufacturing a semiconductor device and a semiconductor device

Heat shield for chamber door and devices manufactured using same

Heat shield for chamber door and devices manufactured using same

Etching using chamber with top plate formed of non-oxygen containing material

Etching using chamber with top plate formed of non-oxygen containing material

Source and drain structure with reduced contact resistance and enhanced mobility

Sacrificial oxide with uniform thickness

Sacrificial oxide with uniform thickness

Integrated circuit structure having a crown-shaped semiconductor strip and an isolation region recessed in the substrate

FinFET devices and methods of forming the same

FinFET devices and methods of forming the same

Formation method of semiconductor device structure

Semiconductor device, method, and tool of manufacture

Semiconductor device structure having a doped passivation layer

Semiconductor device, method and tool of manufacture

Semiconductor device and formation thereof

TAIWAN SEMICONDUCTOR MFG

Dual damascene process

Feature dimension measurement