Inventor

HAQ JESMIN

US35 patents

⚠️ This page may combine multiple inventors who share the name “HAQ JESMIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HAQ JESMIN

TAIWAN SEMICONDUCTOR MFG CO LTD

Critical dimension (CD) uniformity of photoresist island patterns using alternating phase shifting mask

MTJ device performance by adding stress modulation layer to MTJ device structure

MTJ CD variation by HM trimming

Fabrication of large height top metal electrode for sub-60nm magnetoresistive random access memory (MRAM) devices

Self-adaptive halogen treatment to improve photoresist pattern and magnetoresistive random access memory (MRAM) device uniformity

MTJ CD variation by HM trimming

Fabrication of large height top metal electrode for sub-60nm magnetoresistive random access memory (MRAM) devices

Multiple hard mask patterning to fabricate 20nm and below MRAM devices

Self-adaptive halogen treatment to improve photoresist pattern and magnetoresistive random access memory (MRAM) device uniformity

MTJ device performance by controlling device shape

MTJ device performance by controlling device shape

Method for fabricating a magnetic tunneling junction (MTJ) structure

STT-MRAM heat sink and magnetic shield structure design for more robust read/write performance

MTJ device performance by adding stress modulation layer to MTJ device structure

MTJ device performance by controlling device shape

MTJ device performance by adding stress modulation layer to mtj device structure

STT-MRAM heat sink and magnetic shield structure design for more robust read/write performance

Critical dimension (CD) uniformity of photoresist island patterns using alternating phase shifting mask

Ion beam etching fabricated sub 30nm Vias to reduce conductive material re-deposition for sub 60nm MRAM devices

MTJ CD variation by HM trimming

STT-MRAM heat sink and magnetic shield structure design for more robust read/write performance

Ion beam etching fabricated sub 30nm vias to reduce conductive material re-deposition for sub 60nm MRAM devices

Multiple hard mask patterning to fabricate 20nm and below MRAM devices

Critical dimension (CD) uniformity of photoresist island patterns using alternating phase shifting mask

HEADWAY TECH INC

Memory structure having a magnetic tunnel junction (MTJ) self-aligned to a T-shaped bottom electrode, and method of manufacturing the same

MTJ device process/integration method with pre-patterned seed layer

Method to remove sidewall damage after MTJ etching

MTJ etching with improved uniformity and profile by adding passivation step

Etching and encapsulation scheme for magnetic tunnel junction fabrication

Etching and encapsulation scheme for magnetic tunnel junction fabrication

Integration scheme for three terminal spin-orbit-torque (SOT) switching devices

Surface treatment method for dielectric anti-reflective coating (DARC) to shrink photoresist critical dimension (CD)

HAQ JESMIN

Method of preparing a flexible substrate assembly and flexible substrate assembly therefrom

Method of preparing a flexible substrate assembly and flexible substrate assembly therefrom

UNIV ARIZONA

Method for manufacturing electronic devices and electronic devices thereof