Inventor

NAKAMURA SHUJI

JP366 patents

⚠️ This page may combine multiple inventors who share the name “NAKAMURA SHUJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NAKAMURA SHUJI

NICHIA KAGAKU KOGYO KK

Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device

Nitride semiconductor device

Nitride semiconductor light-emitting and light-receiving devices

Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device

Nitride semiconductor device

Gallium nitride-based III-V group compound semiconductor

Nitride semiconductor light-emitting device

Gallium nitride-based III-V group compound semiconductor

Light-emitting gallium nitride-based compound semiconductor device

Light-emitting gallium nitride-based compound semiconducor device

Gallium nitride-based III-V group compound semiconductor

Light-emitting gallium nitride-based compound semiconductor device

Gallium nitride-based III-V group compound semiconductor device and method of producing the same

Method of manufacturing P-type compound semiconductor

Method of manufacturing P-type compound semiconductor

Crystal growth method for gallium nitride-based compound semiconductor

Light-emitting gallium nitride-based compound semiconductor device

Gallium nitride-based III-V group compound semiconductor device and method of producing the same

Gallium nitride-based III-V group compound semiconductor

Light-emitting gallium nitride-based compound semiconductor device

UNIV CALIFORNIA

Method for deposition of magnesium doped (Al, In, Ga, B)N layers

Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface

Transparent light emitting diodes

Optical designs for high-efficacy white-light emitting diodes

Method for improved growth of semipolar (Al,In,Ga,B)N

Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)

Technique for the growth of planar semi-polar gallium nitride

Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy

Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices

HITACHI LTD

Storage device and deduplication method

Storage system and method of preventing deterioration of write performance in storage system

Apparatus and method of mirroring data between nonvolatile memory and hard disk

Storage system and data protection method therefor

Disk array controller comprising a plurality of disk array controlling units

CREE INC

LED with current confinement structure and surface roughening

Susceptor for MOCVD reactor

Susceptor for MOCVD reactor

NICHIA CORP

Nitride semiconductor laser device

Gallium nitride-based III-V group compound semiconductor

FUJITSU COMPONENT LTD

Pointing device

Pointing device

OLYMPUS MEDICAL SYSTEMS CORP

Endoscope

NAGANO FUJITSU COMPONENT LTD

Pointing device

TANAKA KATSUYA

Storage device and deduplication method

FUJIBAYASHI AKIRA

Apparatus and method for mirroring data between nonvolatile memory and a hard disk drive

JAPAN SCIENCE & TECH AGENCY

Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition

FUJITSU TAKAMISAWA COMPONENT

Wireless mouse unit, wireless mouse and receiver

UENO HARUHIKO

Endoscope

NICHIA KAGAKY KOGYO K K

Method of vapor-growing semiconductor crystal and apparatus for vapor-growing the same