Inventor
BICKSLER ANDREW
US34 patents
⚠️ This page may combine multiple inventors who share the name “BICKSLER ANDREW”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
23 patentsUS7212435B2May 1, 2007
Minimizing adjacent wordline disturb in a memory device
MICRON TECHNOLOGY INC68 citations98
US9437604B2Sep 6, 2016
Methods and apparatuses having strings of memory cells including a metal source
MICRON TECHNOLOGY INC21 citations92
US7272039B2Sep 18, 2007
Minimizing adjacent wordline disturb in a memory device
MICRON TECHNOLOGY INC27 citations92
US7257024B2Aug 14, 2007
Minimizing adjacent wordline disturb in a memory device
MICRON TECHNOLOGY INC14 citations92
US8716084B2May 6, 2014
Memory array with an air gap between memory cells and the formation thereof
MICRON TECHNOLOGY INC4 citations72
US11127751B2Sep 21, 2021
Back gates and related apparatuses, systems, and methods
MICRON TECHNOLOGY INC2 citations71
US11665893B2May 30, 2023
Methods and apparatuses having strings of memory cells including a metal source
MICRON TECHNOLOGY INC0 citations63
US8729708B2May 20, 2014
Semiconductor device structures and memory devices including a uniform pattern of conductive material
MICRON TECHNOLOGY INC3 citations63
US7978511B2Jul 12, 2011
Data line management in a memory device
MICRON TECHNOLOGY INC2 citations63
US12190957B2Jan 7, 2025
Dynamic step voltage level adjustment
MICRON TECHNOLOGY INC0 citations62
US11029861B2Jun 8, 2021
Sense flags in a memory device
MICRON TECHNOLOGY INC0 citations62
US12108601B2Oct 1, 2024
Back gates and related apparatuses, systems, and methods
MICRON TECHNOLOGY INC0 citations61
US11949022B2Apr 2, 2024
Three dimensional memory
MICRON TECHNOLOGY INC0 citations61
US11289611B2Mar 29, 2022
Three dimensional memory
MICRON TECHNOLOGY INC0 citations61
US11869590B2Jan 9, 2024
Memory devices including gate leakage transistors
MICRON TECHNOLOGY INC0 citations60
US11917825B2Feb 27, 2024
Microelectronic devices including an oxide material between adjacent decks
MICRON TECHNOLOGY INC0 citations59
US11355514B2Jun 7, 2022
Microelectronic devices including an oxide material between adjacent decks, electronic systems, and related methods
MICRON TECHNOLOGY INC0 citations59
US12563735B2Feb 24, 2026
Electronic devices including vertical strings of memory cells, and related memory devices, systems and methods
MICRON TECHNOLOGY INC0 citations52
US10409506B2Sep 10, 2019
Sense flags in a memory device
MICRON TECHNOLOGY INC0 citations52
US10126967B2Nov 13, 2018
Sense operation flags in a memory device
MICRON TECHNOLOGY INC0 citations52
US9519582B2Dec 13, 2016
Sense operation flags in a memory device
MICRON TECHNOLOGY INC0 citations52
US9490025B2Nov 8, 2016
Methods of programming memory devices
MICRON TECHNOLOGY INC0 citations52
US10651315B2May 12, 2020
Three dimensional memory
MICRON TECHNOLOGY INC0 citations51
BICKSLER ANDREW
7 patentsUS8390051B2Mar 5, 2013
Methods of forming semiconductor device structures and semiconductor device structures including a uniform pattern of conductive lines
BICKSLER ANDREW6 citations83
US8304309B2Nov 6, 2012
Select gates for memory
BICKSLER ANDREW7 citations83
US8243522B2Aug 14, 2012
NAND memory programming method using double vinhibit ramp for improved program disturb
BICKSLER ANDREW8 citations83
US8450789B2May 28, 2013
Memory array with an air gap between memory cells and the formation thereof
BICKSLER ANDREW8 citations82
US8223561B2Jul 17, 2012
Data line management in a memory device
BICKSLER ANDREW4 citations62
US8605509B2Dec 10, 2013
Data line management in a memory device
BICKSLER ANDREW0 citations51
US8519469B2Aug 27, 2013
Select gates for memory
BICKSLER ANDREW0 citations51