Inventor

SUNG SU-JEN

TW30 patents

⚠️ This page may combine multiple inventors who share the name “SUNG SU-JEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUNG SU-JEN

TAIWAN SEMICONDUCTOR MFG CO LTD

Interconnect structure and method of forming same

Capping layer for improved deposition selectivity

Systems and methods for uniform gas flow in a deposition chamber

Interconnect structure and method of forming same

Semiconductor device with multi-layer etch stop structure and method for forming the same

Capping layer for improved deposition selectivity

Integrated circuit structure and method for forming the same

Interconnect structure and method of forming same

Semiconductor structure and manufacturing method thereof

Highly protective wafer edge sidewall protection layer

Semiconductor device with multi-layer etch stop structure

Interconnect structure and method of forming same

Electro-migration barrier for interconnect

Method for forming semiconductor device with multi-layer etch stop structure

Semiconductor structure and manufacturing method thereof

Electro-migration barrier for interconnect

Capping layer for improved deposition selectivity

Semiconductor devices and methods of manufacture thereof

Electro-migration barrier for Cu interconnect

Nitrogen plasma treatment for improving interface between etch stop layer and copper interconnect

Electro-migration barrier for Cu interconnect

Electro-migration barrier for Cu interconnect

Nitrogen plasma treatment for improving interface between etch stop layer and copper interconnect

TAIWAN SEMICONDUCTOR MFG

Interconnect structure and method of forming the same

Semiconductor devices and methods of manufacture thereof

Interconnect structure and method of forming the same

UNITED MICROELECTRONICS CORP

Structure of porous low-k layer and interconnect structure

Forming method of porous low-k layer and interconnect process

CHEN WEI-CHIH

Method for manufacturing a dual damascene opening comprising a trench opening and a via opening

CHEN MEI-LING

Method of fabricating an ultra dielectric constant (K) dielectric layer