Inventor

CHANG SOO-BONG

KR16 patents

⚠️ This page may combine multiple inventors who share the name “CHANG SOO-BONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

15 patents

US8009494B2Aug 30, 2011

Semiconductor memory device implementing full-VDD bit line precharge scheme using bit line sense amplifier

SAMSUNG ELECTRONICS CO LTD7 citations83

US7660141B2Feb 9, 2010

Layout structures and methods of fabricating layout structures

SAMSUNG ELECTRONICS CO LTD10 citations83

US7864599B2Jan 4, 2011

Device and method generating internal voltage in semiconductor memory device

SAMSUNG ELECTRONICS CO LTD7 citations81

US6847536B1Jan 25, 2005

Semiconductor memory device having structure for preventing level of boosting voltage applied to a node from dropping and method of forming the same

SAMSUNG ELECTRONICS CO LTD7 citations73

US6327190B1Dec 4, 2001

Complementary differential input buffer for a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD10 citations73

US10726886B2Jul 28, 2020

Memory circuits precharging memory cell arrays and memory devices including the same

SAMSUNG ELECTRONICS CO LTD3 citations72

US9620197B1Apr 11, 2017

Circuit for driving sense amplifier of semiconductor memory device and operating method thereof

SAMSUNG ELECTRONICS CO LTD3 citations72

US7359280B2Apr 15, 2008

Layout structure for sub word line drivers and method thereof

SAMSUNG ELECTRONICS CO LTD4 citations63

US7474549B2Jan 6, 2009

Bit-line equalizer, semiconductor memory device including the same, and method for manufacturing bit-line equalizer

SAMSUNG ELECTRONICS CO LTD4 citations62

US7336518B2Feb 26, 2008

Layout for equalizer and data line sense amplifier employed in a high speed memory device

SAMSUNG ELECTRONICS CO LTD6 citations62

US7075849B2Jul 11, 2006

Semiconductor memory device and memory system including memory cell arrays and column selection transistors arranged to improve size efficiency

SAMSUNG ELECTRONICS CO LTD0 citations51

US7352636B2Apr 1, 2008

Circuit and method for generating boosted voltage in semiconductor memory device

SAMSUNG ELECTRONICS CO LTD0 citations51

CHANG SOO-BONG

1 patent

US8189406B2May 29, 2012

Device and method generating internal voltage in semiconductor memory device

CHANG SOO-BONG2 citations53

CHANG SOO-BONG

SAMSUNG ELECTRONICS CO LTD

Semiconductor memory device implementing full-VDD bit line precharge scheme using bit line sense amplifier

Layout structures and methods of fabricating layout structures

Device and method generating internal voltage in semiconductor memory device

Semiconductor memory device having structure for preventing level of boosting voltage applied to a node from dropping and method of forming the same

Complementary differential input buffer for a semiconductor memory device

Memory circuits precharging memory cell arrays and memory devices including the same

Circuit for driving sense amplifier of semiconductor memory device and operating method thereof

Layout structure for sub word line drivers and method thereof

Bit-line equalizer, semiconductor memory device including the same, and method for manufacturing bit-line equalizer

Layout for equalizer and data line sense amplifier employed in a high speed memory device

Semiconductor memory device and layout method thereof

Bitline sense amplifier with equalizing transistor and a memory device

Bitline sense amplifier and a memory device with an equalizer

Semiconductor memory device and memory system including memory cell arrays and column selection transistors arranged to improve size efficiency

Circuit and method for generating boosted voltage in semiconductor memory device

CHANG SOO-BONG

Device and method generating internal voltage in semiconductor memory device