Inventor

ESAKI LEO

US21 patents

⚠️ This page may combine multiple inventors who share the name “ESAKI LEO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ESAKI LEO

IBM

Semiconductor device with hole conduction via strained lattice

Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions

FET With heterojunction induced channel

Class of magnetic materials for solid state devices

Semiconductor memory devices

Heterojunction tunneling base transistor

Semiconductor structure

Field effect transistor

One-dimensional quantum pipeline type carrier path semiconductor devices

Molecular-beam epitaxy system and method including hydrogen treatment

Class of magnetic materials for solid state devices

US ARMY

MBE Growth technique for matching superlattices grown on GaAs substrates

Microwave-infrared detector with semiconductor superlattice region

Tunnel diode

Infrared semiconductor device with superlattice region

MBE growth technique for matching superlattices grown on GaAs substrates

Heterojunction superlattice with potential well depth greater than half the bandgap

Controlled absorption in heterojunction structures

Infrared optical devices of layered structure

InAs-GaSb Tunnel diode

Heterojunction transistor