P

Inventor

LEE JUNG-HWA

KR51 patents
⚠️ This page may combine multiple inventors who share the name “LEE JUNG-HWA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

35 patents
US5812466ASep 22, 1998

Column redundancy circuit for a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD37 citations93
US6275429B1Aug 14, 2001

Memory device and equalizing circuit for memory device

SAMSUNG ELECTRONICS CO LTD21 citations92
US6023437AFeb 8, 2000

Semiconductor memory device capable of reducing a precharge time

SAMSUNG ELECTRONICS CO LTD28 citations92
US7462912B2Dec 9, 2008

Semiconductor memory device having power decoupling capacitor

SAMSUNG ELECTRONICS CO LTD28 citations90
US7999299B2Aug 16, 2011

Semiconductor memory device having capacitor for peripheral circuit

SAMSUNG ELECTRONICS CO LTD12 citations84
US7485911B2Feb 3, 2009

Semiconductor device having decoupling capacitor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US6487132B2Nov 26, 2002

Integrated circuit memory devices having multiple input/output buses and precharge circuitry for precharging the input/output buses between write operations

SAMSUNG ELECTRONICS CO LTD14 citations84
US5726939AMar 10, 1998

Semiconductor memory device having fast writing circuit for test thereof

SAMSUNG ELECTRONICS CO LTD17 citations84
US7102952B2Sep 5, 2006

Method and apparatus for increasing data read speed in a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD7 citations74
US6215690B1Apr 10, 2001

Semiconductor memory devices having shared data line contacts

SAMSUNG ELECTRONICS CO LTD5 citations74
US5978247ANov 2, 1999

Layout for a semiconductor memory device having a triple well structure

SAMSUNG ELECTRONICS CO LTD9 citations74
US5892386AApr 6, 1999

Internal power control circuit for a semiconductor device

SAMSUNG ELECTRONICS CO LTD12 citations74
US5657265AAug 12, 1997

Semiconductor memory device having circuit array structure for fast operation

SAMSUNG ELECTRONICS CO LTD8 citations74
US6847536B1Jan 25, 2005

Semiconductor memory device having structure for preventing level of boosting voltage applied to a node from dropping and method of forming the same

SAMSUNG ELECTRONICS CO LTD7 citations73
US6600342B1Jul 29, 2003

Column decoder of semiconductor memory device

SAMSUNG ELECTRONICS CO LTD12 citations69
US8050073B2Nov 1, 2011

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD3 citations63
US7883970B2Feb 8, 2011

Semiconductor device having decoupling capacitor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US7593282B2Sep 22, 2009

Memory core with single contacts and semiconductor memory device having the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7542328B2Jun 2, 2009

Method of detecting bit line bridge by selectively floating even-or odd-numbered bit lines of memory device

SAMSUNG ELECTRONICS CO LTD2 citations63
US7359280B2Apr 15, 2008

Layout structure for sub word line drivers and method thereof

SAMSUNG ELECTRONICS CO LTD4 citations63
US6058064AMay 2, 2000

Semiconductor memory devices having shared data line contacts

SAMSUNG ELECTRONICS CO LTD2 citations63
US7511562B2Mar 31, 2009

High voltage generating circuit preserving charge pumping efficiency

SAMSUNG ELECTRONICS CO LTD2 citations62
US7474549B2Jan 6, 2009

Bit-line equalizer, semiconductor memory device including the same, and method for manufacturing bit-line equalizer

SAMSUNG ELECTRONICS CO LTD4 citations62
US7295058B2Nov 13, 2007

High voltage generating circuit preserving charge pumping efficiency

SAMSUNG ELECTRONICS CO LTD2 citations62
US7075849B2Jul 11, 2006

Semiconductor memory device and layout method thereof

SAMSUNG ELECTRONICS CO LTD2 citations62
US5808957ASep 15, 1998

Address buffers of semiconductor memory device

SAMSUNG ELECTRONICS CO LTD2 citations62
US7403443B2Jul 22, 2008

Layout for distributed sense amplifier driver in memory device

SAMSUNG ELECTRONICS CO LTD2 citations61
US7309883B2Dec 18, 2007

Semiconductor device capable of preventing current flow caused by latch-up and method of forming the same

SAMSUNG ELECTRONICS CO LTD2 citations60
US7898886B2Mar 1, 2011

Sense amplifiers and semiconductor devices including the same

SAMSUNG ELECTRONICS CO LTD3 citations56
US6498763B2Dec 24, 2002

Semiconductor memory device having a memory block with a decreased capacitance

SAMSUNG ELECTRONICS CO LTD1 citations52
US7573320B2Aug 11, 2009

High voltage generating circuit preserving charge pumping efficiency

SAMSUNG ELECTRONICS CO LTD0 citations51
US7573319B2Aug 11, 2009

High voltage generating circuit preserving charge pumping efficiency

SAMSUNG ELECTRONICS CO LTD0 citations51
US7548469B2Jun 16, 2009

Circuit and method of generating a boosted voltage in a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD1 citations51
US12056048B2Aug 6, 2024

System and method for management of electronic memory

SAMSUNG ELECTRONICS CO LTD0 citations42
US7573321B2Aug 11, 2009

High voltage generator

SAMSUNG ELECTRONICS CO LTD0 citations31

HARVARD COLLEGE

2 patents

KIM JAE-GON

2 patents

ROHM & HAAS ELECT MATERIALS KOREA LTD

2 patents

LINCOLN GLOBAL INC

1 patent

HYNIX SEMICONDUCTOR INC

1 patent

LEE JAE-YOUNG

1 patent

POSTECH ACAD IND FOUND

1 patent

KOREA INST OF GEOSCIENCE AND MINERAL RESOURCES (KIGAM)

1 patent

LEE HYUN SOOK

1 patent

KOREA INST GEOSCIENCE & MINERAL RESOURCES KIGAM

1 patent

LEE SANG-WON

1 patent

SAMSUNG SDI CO LTD

1 patent

Showing the top 50 of 51 patents by PatentIndex Score.