Inventor
LEE JUNG-HWA
KR51 patents
⚠️ This page may combine multiple inventors who share the name “LEE JUNG-HWA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
35 patentsUS5812466ASep 22, 1998
Column redundancy circuit for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD37 citations93
US6275429B1Aug 14, 2001
Memory device and equalizing circuit for memory device
SAMSUNG ELECTRONICS CO LTD21 citations92
US6023437AFeb 8, 2000
Semiconductor memory device capable of reducing a precharge time
SAMSUNG ELECTRONICS CO LTD28 citations92
US7462912B2Dec 9, 2008
Semiconductor memory device having power decoupling capacitor
SAMSUNG ELECTRONICS CO LTD28 citations90
US7999299B2Aug 16, 2011
Semiconductor memory device having capacitor for peripheral circuit
SAMSUNG ELECTRONICS CO LTD12 citations84
US7485911B2Feb 3, 2009
Semiconductor device having decoupling capacitor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US6487132B2Nov 26, 2002
Integrated circuit memory devices having multiple input/output buses and precharge circuitry for precharging the input/output buses between write operations
SAMSUNG ELECTRONICS CO LTD14 citations84
US5726939AMar 10, 1998
Semiconductor memory device having fast writing circuit for test thereof
SAMSUNG ELECTRONICS CO LTD17 citations84
US7102952B2Sep 5, 2006
Method and apparatus for increasing data read speed in a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD7 citations74
US6215690B1Apr 10, 2001
Semiconductor memory devices having shared data line contacts
SAMSUNG ELECTRONICS CO LTD5 citations74
US5978247ANov 2, 1999
Layout for a semiconductor memory device having a triple well structure
SAMSUNG ELECTRONICS CO LTD9 citations74
US5892386AApr 6, 1999
Internal power control circuit for a semiconductor device
SAMSUNG ELECTRONICS CO LTD12 citations74
US5657265AAug 12, 1997
Semiconductor memory device having circuit array structure for fast operation
SAMSUNG ELECTRONICS CO LTD8 citations74
US6847536B1Jan 25, 2005
Semiconductor memory device having structure for preventing level of boosting voltage applied to a node from dropping and method of forming the same
SAMSUNG ELECTRONICS CO LTD7 citations73
US6600342B1Jul 29, 2003
Column decoder of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD12 citations69
US8050073B2Nov 1, 2011
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD3 citations63
US7883970B2Feb 8, 2011
Semiconductor device having decoupling capacitor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7593282B2Sep 22, 2009
Memory core with single contacts and semiconductor memory device having the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7542328B2Jun 2, 2009
Method of detecting bit line bridge by selectively floating even-or odd-numbered bit lines of memory device
SAMSUNG ELECTRONICS CO LTD2 citations63
US7359280B2Apr 15, 2008
Layout structure for sub word line drivers and method thereof
SAMSUNG ELECTRONICS CO LTD4 citations63
US6058064AMay 2, 2000
Semiconductor memory devices having shared data line contacts
SAMSUNG ELECTRONICS CO LTD2 citations63
US7511562B2Mar 31, 2009
High voltage generating circuit preserving charge pumping efficiency
SAMSUNG ELECTRONICS CO LTD2 citations62
US7474549B2Jan 6, 2009
Bit-line equalizer, semiconductor memory device including the same, and method for manufacturing bit-line equalizer
SAMSUNG ELECTRONICS CO LTD4 citations62
US7295058B2Nov 13, 2007
High voltage generating circuit preserving charge pumping efficiency
SAMSUNG ELECTRONICS CO LTD2 citations62
US7075849B2Jul 11, 2006
Semiconductor memory device and layout method thereof
SAMSUNG ELECTRONICS CO LTD2 citations62
US5808957ASep 15, 1998
Address buffers of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations62
US7403443B2Jul 22, 2008
Layout for distributed sense amplifier driver in memory device
SAMSUNG ELECTRONICS CO LTD2 citations61
US7309883B2Dec 18, 2007
Semiconductor device capable of preventing current flow caused by latch-up and method of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations60
US7898886B2Mar 1, 2011
Sense amplifiers and semiconductor devices including the same
SAMSUNG ELECTRONICS CO LTD3 citations56
US6498763B2Dec 24, 2002
Semiconductor memory device having a memory block with a decreased capacitance
SAMSUNG ELECTRONICS CO LTD1 citations52
US7573320B2Aug 11, 2009
High voltage generating circuit preserving charge pumping efficiency
SAMSUNG ELECTRONICS CO LTD0 citations51
US7573319B2Aug 11, 2009
High voltage generating circuit preserving charge pumping efficiency
SAMSUNG ELECTRONICS CO LTD0 citations51
US7548469B2Jun 16, 2009
Circuit and method of generating a boosted voltage in a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD1 citations51
US12056048B2Aug 6, 2024
System and method for management of electronic memory
SAMSUNG ELECTRONICS CO LTD0 citations42
US7573321B2Aug 11, 2009
High voltage generator
SAMSUNG ELECTRONICS CO LTD0 citations31
HARVARD COLLEGE
2 patentsKIM JAE-GON
2 patentsROHM & HAAS ELECT MATERIALS KOREA LTD
2 patentsUS11487200B2Nov 1, 2022
Positive-type photosensitive resin composition and cured film prepared therefrom
ROHM & HAAS ELECT MATERIALS KOREA LTD0 citations59
US11106133B2Aug 31, 2021
Positive-type photosensitive resin composition and cured film prepared therefrom
ROHM & HAAS ELECT MATERIALS KOREA LTD1 citations58
LINCOLN GLOBAL INC
1 patentHYNIX SEMICONDUCTOR INC
1 patentLEE JAE-YOUNG
1 patentPOSTECH ACAD IND FOUND
1 patentKOREA INST OF GEOSCIENCE AND MINERAL RESOURCES (KIGAM)
1 patentLEE HYUN SOOK
1 patentKOREA INST GEOSCIENCE & MINERAL RESOURCES KIGAM
1 patentLEE SANG-WON
1 patentSAMSUNG SDI CO LTD
1 patentShowing the top 50 of 51 patents by PatentIndex Score.