Inventor
ARNOLD EMIL
US14 patents
⚠️ This page may combine multiple inventors who share the name “ARNOLD EMIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
PHILIPS CORP
9 patentsUS5767547AJun 16, 1998
High voltage thin film transistor having a linear doping profile
PHILIPS CORP49 citations96
US5300448AApr 5, 1994
High voltage thin film transistor having a linear doping profile and method for making
PHILIPS CORP72 citations96
US5113236AMay 12, 1992
Integrated circuit device particularly adapted for high voltage applications
PHILIPS CORP53 citations96
US5261999ANov 16, 1993
Process for making strain-compensated bonded silicon-on-insulator material free of dislocations
PHILIPS CORP93 citations95
US5213986AMay 25, 1993
Process for making thin film silicon-on-insulator wafers employing wafer bonding and wafer thinning
PHILIPS CORP98 citations95
US3973146AAug 3, 1976
Signal detector comprising field effect transistors
PHILIPS CORP54 citations92
US4575923AMar 18, 1986
Method of manufacturing a high resistance layer having a low temperature coefficient of resistance and semiconductor device having such high resistance layer
PHILIPS CORP19 citations81
US4555300ANov 26, 1985
Method for producing single crystal layers on insulators
PHILIPS CORP11 citations71
US4542405ASep 17, 1985
Method and apparatus for displaying and reading out an image
PHILIPS CORP4 citations62
PHILIPS ELECTRONICS NA
3 patentsUS6310378B1Oct 30, 2001
High voltage thin film transistor with improved on-state characteristics and method for making same
PHILIPS ELECTRONICS NA57 citations96
US6373076B1Apr 16, 2002
Passivated silicon carbide devices with low leakage current and method of fabricating
PHILIPS ELECTRONICS NA46 citations95
US6011278AJan 4, 2000
Lateral silicon carbide semiconductor device having a drift region with a varying doping level
PHILIPS ELECTRONICS NA22 citations92
KONINKL PHILIPS ELECTRONICS NV
2 patentsUS6559068B2May 6, 2003
Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor
KONINKL PHILIPS ELECTRONICS NV16 citations83
US6703276B2Mar 9, 2004
Passivated silicon carbide devices with low leakage current and method of fabricating
KONINKL PHILIPS ELECTRONICS NV12 citations73