Inventor
LAI ERH-KUN
US239 patents
⚠️ This page may combine multiple inventors who share the name “LAI ERH-KUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
41 patentsUS7697316B2Apr 13, 2010
Multi-level cell resistance random access memory with metal oxides
MACRONIX INT CO LTD270 citations99
US7608848B2Oct 27, 2009
Bridge resistance random access memory device with a singular contact structure
MACRONIX INT CO LTD282 citations99
US7586778B2Sep 8, 2009
Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states
MACRONIX INT CO LTD259 citations99
US7999295B2Aug 16, 2011
Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same
MACRONIX INT CO LTD49 citations98
US7777215B2Aug 17, 2010
Resistive memory structure with buffer layer
MACRONIX INT CO LTD57 citations98
US7576386B2Aug 18, 2009
Non-volatile memory semiconductor device having an oxide-nitride-oxide (ONO) top dielectric layer
MACRONIX INT CO LTD55 citations98
US7450423B2Nov 11, 2008
Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structure
MACRONIX INT CO LTD278 citations98
US6432778B1Aug 13, 2002
Method of forming a system on chip (SOC) with nitride read only memory (NROM)
MACRONIX INT CO LTD144 citations98
US7560337B2Jul 14, 2009
Programmable resistive RAM and manufacturing method
MACRONIX INT CO LTD47 citations96
US7473589B2Jan 6, 2009
Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same
MACRONIX INT CO LTD47 citations96
US6413815B1Jul 2, 2002
Method of forming a MIM capacitor
MACRONIX INT CO LTD61 citations96
US10910393B2Feb 2, 2021
3D NOR memory having vertical source and drain structures
MACRONIX INT CO LTD24 citations94
US10141221B1Nov 27, 2018
Method for manufacturing three dimensional stacked semiconductor structure and structure manufactured by the same
MACRONIX INT CO LTD37 citations94
US10043819B1Aug 7, 2018
Method for manufacturing 3D NAND memory using gate replacement, and resulting structures
MACRONIX INT CO LTD40 citations94
US9484353B1Nov 1, 2016
Memory device and method for fabricating the same
MACRONIX INT CO LTD27 citations94
US9362302B1Jun 7, 2016
Source line formation in 3D vertical channel and memory
MACRONIX INT CO LTD30 citations94
US7960224B2Jun 14, 2011
Operation method for multi-level switching of metal-oxide based RRAM
MACRONIX INT CO LTD21 citations93
US7923285B2Apr 12, 2011
Method for forming self-aligned thermal isolation cell for a variable resistance memory array
MACRONIX INT CO LTD23 citations93
US7816661B2Oct 19, 2010
Air cell thermal isolation for a memory array formed of a programmable resistive material
MACRONIX INT CO LTD20 citations93
US7800094B2Sep 21, 2010
Resistance memory with tungsten compound and manufacturing
MACRONIX INT CO LTD26 citations93
US7718989B2May 18, 2010
Resistor random access memory cell device
MACRONIX INT CO LTD19 citations93
US7709334B2May 4, 2010
Stacked non-volatile memory device and methods for fabricating the same
MACRONIX INT CO LTD25 citations93
US7605079B2Oct 20, 2009
Manufacturing method for phase change RAM with electrode layer process
MACRONIX INT CO LTD25 citations93
US7463530B2Dec 9, 2008
Operating method of non-volatile memory device
MACRONIX INT CO LTD44 citations93
US7442603B2Oct 28, 2008
Self-aligned structure and method for confining a melting point in a resistor random access memory
MACRONIX INT CO LTD21 citations93
US7388771B2Jun 17, 2008
Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states
MACRONIX INT CO LTD20 citations93
US6599801B1Jul 29, 2003
Method of fabricating NROM memory cell
MACRONIX INT CO LTD26 citations93
US9461063B1Oct 4, 2016
Method for forming a semiconductor structure
MACRONIX INT CO LTD22 citations92
US9455403B1Sep 27, 2016
Semiconductor structure and method for manufacturing the same
MACRONIX INT CO LTD22 citations92
US7524722B2Apr 28, 2009
Resistance type memory device and fabricating method and operating method thereof
MACRONIX INT CO LTD16 citations92
US6448126B1Sep 10, 2002
Method of forming an embedded memory
MACRONIX INT CO LTD29 citations92
US6448137B1Sep 10, 2002
Method of forming an NROM embedded with mixed-signal circuits
MACRONIX INT CO LTD25 citations92
US6440798B1Aug 27, 2002
Method of forming a mixed-signal circuit embedded NROM memory and MROM memory
MACRONIX INT CO LTD26 citations92
US6387750B1May 14, 2002
Method of forming MIM capacitor
MACRONIX INT CO LTD32 citations90
US7106623B2Sep 12, 2006
Phase-change multi-level cell and operating method thereof
MACRONIX INT CO LTD38 citations87
US11069704B2Jul 20, 2021
3D NOR memory having vertical gate structures
MACRONIX INT CO LTD11 citations86
US10636812B1Apr 28, 2020
Reducing word line capacitance in 3D memory
MACRONIX INT CO LTD12 citations86
US10157963B1Dec 18, 2018
Semiconductor device with memory structure
MACRONIX INT CO LTD8 citations84
US10026750B1Jul 17, 2018
Memory device and method for operating the same
MACRONIX INT CO LTD10 citations84
US9559113B2Jan 31, 2017
SSL/GSL gate oxide in 3D vertical channel NAND
MACRONIX INT CO LTD14 citations84
US9537093B1Jan 3, 2017
Memory structure
MACRONIX INT CO LTD15 citations84
LUNG HSIANG-LAN
5 patentsUS8426294B2Apr 23, 2013
3D memory array arranged for FN tunneling program and erase
LUNG HSIANG-LAN165 citations99
US8203187B2Jun 19, 2012
3D memory array arranged for FN tunneling program and erase
LUNG HSIANG-LAN309 citations99
US8437192B2May 7, 2013
3D two bit-per-cell NAND flash memory
LUNG HSIANG-LAN61 citations98
US8089137B2Jan 3, 2012
Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method
LUNG HSIANG-LAN124 citations98
US8395935B2Mar 12, 2013
Cross-point self-aligned reduced cell size phase change memory
LUNG HSIANG-LAN25 citations93
LUE HANG-TING
1 patentCHIEN WEI-CHIH
1 patentLAI ERH-KUN
1 patentLAI ERH KUN
1 patentShowing the top 50 of 239 patents by PatentIndex Score.