P

Inventor

LAI ERH-KUN

US239 patents
⚠️ This page may combine multiple inventors who share the name “LAI ERH-KUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MACRONIX INT CO LTD

41 patents
US7697316B2Apr 13, 2010

Multi-level cell resistance random access memory with metal oxides

MACRONIX INT CO LTD270 citations99
US7608848B2Oct 27, 2009

Bridge resistance random access memory device with a singular contact structure

MACRONIX INT CO LTD282 citations99
US7586778B2Sep 8, 2009

Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states

MACRONIX INT CO LTD259 citations99
US7999295B2Aug 16, 2011

Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same

MACRONIX INT CO LTD49 citations98
US7777215B2Aug 17, 2010

Resistive memory structure with buffer layer

MACRONIX INT CO LTD57 citations98
US7576386B2Aug 18, 2009

Non-volatile memory semiconductor device having an oxide-nitride-oxide (ONO) top dielectric layer

MACRONIX INT CO LTD55 citations98
US7450423B2Nov 11, 2008

Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structure

MACRONIX INT CO LTD278 citations98
US6432778B1Aug 13, 2002

Method of forming a system on chip (SOC) with nitride read only memory (NROM)

MACRONIX INT CO LTD144 citations98
US7560337B2Jul 14, 2009

Programmable resistive RAM and manufacturing method

MACRONIX INT CO LTD47 citations96
US7473589B2Jan 6, 2009

Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same

MACRONIX INT CO LTD47 citations96
US6413815B1Jul 2, 2002

Method of forming a MIM capacitor

MACRONIX INT CO LTD61 citations96
US10910393B2Feb 2, 2021

3D NOR memory having vertical source and drain structures

MACRONIX INT CO LTD24 citations94
US10141221B1Nov 27, 2018

Method for manufacturing three dimensional stacked semiconductor structure and structure manufactured by the same

MACRONIX INT CO LTD37 citations94
US10043819B1Aug 7, 2018

Method for manufacturing 3D NAND memory using gate replacement, and resulting structures

MACRONIX INT CO LTD40 citations94
US9484353B1Nov 1, 2016

Memory device and method for fabricating the same

MACRONIX INT CO LTD27 citations94
US9362302B1Jun 7, 2016

Source line formation in 3D vertical channel and memory

MACRONIX INT CO LTD30 citations94
US7960224B2Jun 14, 2011

Operation method for multi-level switching of metal-oxide based RRAM

MACRONIX INT CO LTD21 citations93
US7923285B2Apr 12, 2011

Method for forming self-aligned thermal isolation cell for a variable resistance memory array

MACRONIX INT CO LTD23 citations93
US7816661B2Oct 19, 2010

Air cell thermal isolation for a memory array formed of a programmable resistive material

MACRONIX INT CO LTD20 citations93
US7800094B2Sep 21, 2010

Resistance memory with tungsten compound and manufacturing

MACRONIX INT CO LTD26 citations93
US7718989B2May 18, 2010

Resistor random access memory cell device

MACRONIX INT CO LTD19 citations93
US7709334B2May 4, 2010

Stacked non-volatile memory device and methods for fabricating the same

MACRONIX INT CO LTD25 citations93
US7605079B2Oct 20, 2009

Manufacturing method for phase change RAM with electrode layer process

MACRONIX INT CO LTD25 citations93
US7463530B2Dec 9, 2008

Operating method of non-volatile memory device

MACRONIX INT CO LTD44 citations93
US7442603B2Oct 28, 2008

Self-aligned structure and method for confining a melting point in a resistor random access memory

MACRONIX INT CO LTD21 citations93
US7388771B2Jun 17, 2008

Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states

MACRONIX INT CO LTD20 citations93
US6599801B1Jul 29, 2003

Method of fabricating NROM memory cell

MACRONIX INT CO LTD26 citations93
US9461063B1Oct 4, 2016

Method for forming a semiconductor structure

MACRONIX INT CO LTD22 citations92
US9455403B1Sep 27, 2016

Semiconductor structure and method for manufacturing the same

MACRONIX INT CO LTD22 citations92
US7524722B2Apr 28, 2009

Resistance type memory device and fabricating method and operating method thereof

MACRONIX INT CO LTD16 citations92
US6448126B1Sep 10, 2002

Method of forming an embedded memory

MACRONIX INT CO LTD29 citations92
US6448137B1Sep 10, 2002

Method of forming an NROM embedded with mixed-signal circuits

MACRONIX INT CO LTD25 citations92
US6440798B1Aug 27, 2002

Method of forming a mixed-signal circuit embedded NROM memory and MROM memory

MACRONIX INT CO LTD26 citations92
US6387750B1May 14, 2002

Method of forming MIM capacitor

MACRONIX INT CO LTD32 citations90
US7106623B2Sep 12, 2006

Phase-change multi-level cell and operating method thereof

MACRONIX INT CO LTD38 citations87
US11069704B2Jul 20, 2021

3D NOR memory having vertical gate structures

MACRONIX INT CO LTD11 citations86
US10636812B1Apr 28, 2020

Reducing word line capacitance in 3D memory

MACRONIX INT CO LTD12 citations86
US10157963B1Dec 18, 2018

Semiconductor device with memory structure

MACRONIX INT CO LTD8 citations84
US10026750B1Jul 17, 2018

Memory device and method for operating the same

MACRONIX INT CO LTD10 citations84
US9559113B2Jan 31, 2017

SSL/GSL gate oxide in 3D vertical channel NAND

MACRONIX INT CO LTD14 citations84
US9537093B1Jan 3, 2017

Memory structure

MACRONIX INT CO LTD15 citations84

LUNG HSIANG-LAN

5 patents

LUE HANG-TING

1 patent

CHIEN WEI-CHIH

1 patent

LAI ERH-KUN

1 patent

LAI ERH KUN

1 patent

Showing the top 50 of 239 patents by PatentIndex Score.