Inventor
KANG JIN-YEONG
KR25 patents
⚠️ This page may combine multiple inventors who share the name “KANG JIN-YEONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KOREA ELECTRONICS TELECOMM
20 patentsUS6661325B2Dec 9, 2003
Spiral inductor having parallel-branch structure
KOREA ELECTRONICS TELECOMM34 citations92
US6346861B2Feb 12, 2002
Phase locked loop with high-speed locking characteristic
KOREA ELECTRONICS TELECOMM22 citations91
US7943995B2May 17, 2011
NMOS device, PMOS device, and SiGe HBT device formed on SOI substrate and method of fabricating the same
KOREA ELECTRONICS TELECOMM7 citations84
US7902577B2Mar 8, 2011
Image sensor having heterojunction bipolar transistor and method of fabricating the same
KOREA ELECTRONICS TELECOMM10 citations84
US7741665B2Jun 22, 2010
High-quality CMOS image sensor and photo diode
KOREA ELECTRONICS TELECOMM9 citations84
US7348632B2Mar 25, 2008
NMOS device formed on SOI substrate and method of fabricating the same
KOREA ELECTRONICS TELECOMM14 citations84
US7115459B2Oct 3, 2006
Method of fabricating SiGe Bi-CMOS device
KOREA ELECTRONICS TELECOMM18 citations84
US6469609B2Oct 22, 2002
Method of fabricating silver inductor
KOREA ELECTRONICS TELECOMM18 citations84
US7375504B2May 20, 2008
Reference current generator
KOREA ELECTRONICS TELECOMM10 citations83
US6980075B2Dec 27, 2005
Inductor having high quality factor and unit inductor arranging method thereof
KOREA ELECTRONICS TELECOMM15 citations83
US7157977B2Jan 2, 2007
Automatic gain control feedback amplifier
KOREA ELECTRONICS TELECOMM10 citations80
US5389796AFeb 14, 1995
Vacuum transistor having an optical gate
KOREA ELECTRONICS TELECOMM10 citations74
US7094617B2Aug 22, 2006
Optoelectronic device having dual-structural nano dot and method for manufacturing the same
KOREA ELECTRONICS TELECOMM6 citations73
US6791105B2Sep 14, 2004
Optoelectronic device having dual-structural nano dot and method for manufacturing the same
KOREA ELECTRONICS TELECOMM12 citations73
US6686640B2Feb 3, 2004
Varactor having improved Q-factor and method of fabricating the same using SiGe heterojunction bipolar transistor
KOREA ELECTRONICS TELECOMM10 citations72
US7534680B2May 19, 2009
Bipolar transistor, BiCMOS device, and method for fabricating thereof
KOREA ELECTRONICS TELECOMM4 citations63
US9058891B2Jun 16, 2015
EEPROM cell and EEPROM device
KOREA ELECTRONICS TELECOMM2 citations62
US7170355B2Jan 30, 2007
Voltage-controlled oscillator using current feedback network
KOREA ELECTRONICS TELECOMM5 citations58
US7994553B2Aug 9, 2011
CMOS-based planar type silicon avalanche photo diode using silicon epitaxial layer and method of manufacturing the same
KOREA ELECTRONICS TELECOMM1 citations51
US7855366B2Dec 21, 2010
Bipolar junction transistor-based uncooled infrared sensor and manufacturing method thereof
KOREA ELECTRONICS TELECOMM1 citations51
KANG JIN-YEONG
3 patentsUS8421144B2Apr 16, 2013
Electrically erasable programmable read-only memory and manufacturing method thereof
KANG JIN-YEONG7 citations82
US8730728B2May 20, 2014
EEPROM cell with transfer gate
KANG JIN-YEONG6 citations71
US8927433B2Jan 6, 2015
Conductive via hole and method for forming conductive via hole
KANG JIN-YEONG0 citations51