P

Inventor

KANG JIN-YEONG

KR25 patents
⚠️ This page may combine multiple inventors who share the name “KANG JIN-YEONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KOREA ELECTRONICS TELECOMM

20 patents
US6661325B2Dec 9, 2003

Spiral inductor having parallel-branch structure

KOREA ELECTRONICS TELECOMM34 citations92
US6346861B2Feb 12, 2002

Phase locked loop with high-speed locking characteristic

KOREA ELECTRONICS TELECOMM22 citations91
US7943995B2May 17, 2011

NMOS device, PMOS device, and SiGe HBT device formed on SOI substrate and method of fabricating the same

KOREA ELECTRONICS TELECOMM7 citations84
US7902577B2Mar 8, 2011

Image sensor having heterojunction bipolar transistor and method of fabricating the same

KOREA ELECTRONICS TELECOMM10 citations84
US7741665B2Jun 22, 2010

High-quality CMOS image sensor and photo diode

KOREA ELECTRONICS TELECOMM9 citations84
US7348632B2Mar 25, 2008

NMOS device formed on SOI substrate and method of fabricating the same

KOREA ELECTRONICS TELECOMM14 citations84
US7115459B2Oct 3, 2006

Method of fabricating SiGe Bi-CMOS device

KOREA ELECTRONICS TELECOMM18 citations84
US6469609B2Oct 22, 2002

Method of fabricating silver inductor

KOREA ELECTRONICS TELECOMM18 citations84
US7375504B2May 20, 2008

Reference current generator

KOREA ELECTRONICS TELECOMM10 citations83
US6980075B2Dec 27, 2005

Inductor having high quality factor and unit inductor arranging method thereof

KOREA ELECTRONICS TELECOMM15 citations83
US7157977B2Jan 2, 2007

Automatic gain control feedback amplifier

KOREA ELECTRONICS TELECOMM10 citations80
US5389796AFeb 14, 1995

Vacuum transistor having an optical gate

KOREA ELECTRONICS TELECOMM10 citations74
US7094617B2Aug 22, 2006

Optoelectronic device having dual-structural nano dot and method for manufacturing the same

KOREA ELECTRONICS TELECOMM6 citations73
US6791105B2Sep 14, 2004

Optoelectronic device having dual-structural nano dot and method for manufacturing the same

KOREA ELECTRONICS TELECOMM12 citations73
US6686640B2Feb 3, 2004

Varactor having improved Q-factor and method of fabricating the same using SiGe heterojunction bipolar transistor

KOREA ELECTRONICS TELECOMM10 citations72
US7534680B2May 19, 2009

Bipolar transistor, BiCMOS device, and method for fabricating thereof

KOREA ELECTRONICS TELECOMM4 citations63
US9058891B2Jun 16, 2015

EEPROM cell and EEPROM device

KOREA ELECTRONICS TELECOMM2 citations62
US7170355B2Jan 30, 2007

Voltage-controlled oscillator using current feedback network

KOREA ELECTRONICS TELECOMM5 citations58
US7994553B2Aug 9, 2011

CMOS-based planar type silicon avalanche photo diode using silicon epitaxial layer and method of manufacturing the same

KOREA ELECTRONICS TELECOMM1 citations51
US7855366B2Dec 21, 2010

Bipolar junction transistor-based uncooled infrared sensor and manufacturing method thereof

KOREA ELECTRONICS TELECOMM1 citations51

KANG JIN-YEONG

3 patents

KANG JIN YEONG

1 patent

DO LEE MI

1 patent