Inventor
HANAWA HIROJI
US110 patents
Patents
50 patentsUS7695590B2Apr 13, 2010
Chemical vapor deposition plasma reactor having plural ion shower grids
APPLIED MATERIALS INC195 citations99
US7429532B2Sep 30, 2008
Semiconductor substrate process using an optically writable carbon-containing mask
APPLIED MATERIALS INC539 citations99
US7422775B2Sep 9, 2008
Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
APPLIED MATERIALS INC535 citations99
US7393765B2Jul 1, 2008
Low temperature CVD process with selected stress of the CVD layer on CMOS devices
APPLIED MATERIALS INC562 citations99
US7335611B2Feb 26, 2008
Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
APPLIED MATERIALS INC535 citations99
US7323401B2Jan 29, 2008
Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
APPLIED MATERIALS INC580 citations99
US7312162B2Dec 25, 2007
Low temperature plasma deposition process for carbon layer deposition
APPLIED MATERIALS INC544 citations99
US7312148B2Dec 25, 2007
Copper barrier reflow process employing high speed optical annealing
APPLIED MATERIALS INC537 citations99
US7291360B2Nov 6, 2007
Chemical vapor deposition plasma process using plural ion shower grids
APPLIED MATERIALS INC186 citations99
US7244474B2Jul 17, 2007
Chemical vapor deposition plasma process using an ion shower grid
APPLIED MATERIALS INC195 citations99
US7109098B1Sep 19, 2006
Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
APPLIED MATERIALS INC551 citations99
US6679981B1Jan 20, 2004
Inductive plasma loop enhancing magnetron sputtering
APPLIED MATERIALS INC329 citations99
US5849136ADec 15, 1998
High frequency semiconductor wafer processing apparatus and method
APPLIED MATERIALS INC188 citations99
US5710486AJan 20, 1998
Inductively and multi-capacitively coupled plasma reactor
APPLIED MATERIALS INC139 citations99
US5688357ANov 18, 1997
Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
APPLIED MATERIALS INC151 citations99
US5618382AApr 8, 1997
High-frequency semiconductor wafer processing apparatus and method
APPLIED MATERIALS INC125 citations99
US5449432ASep 12, 1995
Method of treating a workpiece with a plasma and processing reactor having plasma igniter and inductive coupler for semiconductor fabrication
APPLIED MATERIALS INC154 citations99
US7767561B2Aug 3, 2010
Plasma immersion ion implantation reactor having an ion shower grid
APPLIED MATERIALS INC68 citations98
US7666464B2Feb 23, 2010
RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
APPLIED MATERIALS INC63 citations98
US7291545B2Nov 6, 2007
Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage
APPLIED MATERIALS INC73 citations98
US7183177B2Feb 27, 2007
Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
APPLIED MATERIALS INC119 citations98
US7137354B2Nov 21, 2006
Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
APPLIED MATERIALS INC63 citations98
US7094670B2Aug 22, 2006
Plasma immersion ion implantation process
APPLIED MATERIALS INC79 citations98
US7037813B2May 2, 2006
Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
APPLIED MATERIALS INC76 citations98
US6939434B2Sep 6, 2005
Externally excited torroidal plasma source with magnetic control of ion distribution
APPLIED MATERIALS INC72 citations98
US6551446B1Apr 22, 2003
Externally excited torroidal plasma source with a gas distribution plate
APPLIED MATERIALS INC96 citations98
US6410449B1Jun 25, 2002
Method of processing a workpiece using an externally excited torroidal plasma source
APPLIED MATERIALS INC88 citations98
US6348126B1Feb 19, 2002
Externally excited torroidal plasma source
APPLIED MATERIALS INC121 citations98
US6189483B1Feb 20, 2001
Process kit
APPLIED MATERIALS INC341 citations98
US6170428B1Jan 9, 2001
Symmetric tunable inductively coupled HDP-CVD reactor
APPLIED MATERIALS INC430 citations98
US5614060AMar 25, 1997
Process and apparatus for etching metal in integrated circuit structure with high selectivity to photoresist and good metal etch residue removal
APPLIED MATERIALS INC122 citations98
US6893907B2May 17, 2005
Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
APPLIED MATERIALS INC127 citations97
US6083344AJul 4, 2000
Multi-zone RF inductively coupled source configuration
APPLIED MATERIALS INC346 citations97
US5900062AMay 4, 1999
Lift pin for dechucking substrates
APPLIED MATERIALS INC102 citations97
US7292428B2Nov 6, 2007
Electrostatic chuck with smart lift-pin mechanism for a plasma reactor
APPLIED MATERIALS INC57 citations96
US7223676B2May 29, 2007
Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
APPLIED MATERIALS INC49 citations96
US6975107B2Dec 13, 2005
Eddy current sensing of metal removal for chemical mechanical polishing
APPLIED MATERIALS INC35 citations96
US6924641B1Aug 2, 2005
Method and apparatus for monitoring a metal layer during chemical mechanical polishing
APPLIED MATERIALS INC63 citations96
US6494986B1Dec 17, 2002
Externally excited multiple torroidal plasma source
APPLIED MATERIALS INC65 citations96
US6468388B1Oct 22, 2002
Reactor chamber for an externally excited torroidal plasma source with a gas distribution plate
APPLIED MATERIALS INC66 citations96
US6453842B1Sep 24, 2002
Externally excited torroidal plasma source using a gas distribution plate
APPLIED MATERIALS INC62 citations96
US6286451B1Sep 11, 2001
Dome: shape and temperature controlled surfaces
APPLIED MATERIALS INC101 citations96
US6027601AFeb 22, 2000
Automatic frequency tuning of an RF plasma source of an inductively coupled plasma reactor
APPLIED MATERIALS INC77 citations96
US6020686AFeb 1, 2000
Inductively and multi-capacitively coupled plasma reactor
APPLIED MATERIALS INC52 citations96
US5897712AApr 27, 1999
Plasma uniformity control for an inductive plasma source
APPLIED MATERIALS INC63 citations96
US5817534AOct 6, 1998
RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers
APPLIED MATERIALS INC94 citations96
US5451784ASep 19, 1995
Composite diagnostic wafer for semiconductor wafer processing systems
APPLIED MATERIALS INC83 citations96
US5431799AJul 11, 1995
Collimation hardware with RF bias rings to enhance sputter and/or substrate cavity ion generation efficiency
APPLIED MATERIALS INC105 citations96
US7221553B2May 22, 2007
Substrate support having heat transfer system
APPLIED MATERIALS INC49 citations95
US5753044AMay 19, 1998
RF plasma reactor with hybrid conductor and multi-radius dome ceiling
APPLIED MATERIALS INC91 citations95
Showing the top 50 of 110 patents by PatentIndex Score.