Inventor
CHEN TUNG-YANG
TW32 patents
⚠️ This page may combine multiple inventors who share the name “CHEN TUNG-YANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
8 patentsUS6465768B1Oct 15, 2002
MOS structure with improved substrate-triggered effect for on-chip ESD protection
UNITED MICROELECTRONICS CORP92 citations98
US6072219AJun 6, 2000
Substrate-triggering electrostatic discharge protection circuit for deep-submicron integrated circuits
UNITED MICROELECTRONICS CORP59 citations96
US7023678B2Apr 4, 2006
ESD protection designs with parallel LC tank for giga-hertz RF integrated circuits
UNITED MICROELECTRONICS CORP13 citations92
US7009826B2Mar 7, 2006
ESD protection designs with parallel LC tank for giga-hertz RF integrated circuits
UNITED MICROELECTRONICS CORP17 citations92
US6621133B1Sep 16, 2003
Electrostatic discharge protection device
UNITED MICROELECTRONICS CORP40 citations92
US6972476B2Dec 6, 2005
Diode and diode string structure
UNITED MICROELECTRONICS CORP7 citations74
US7023677B2Apr 4, 2006
ESD protection designs with parallel LC tank for Giga-Hertz RF integrated circuits
UNITED MICROELECTRONICS CORP8 citations73
US6849907B2Feb 1, 2005
Electrostatic discharge protection device
UNITED MICROELECTRONICS CORP2 citations63
HIMAX TECH LTD
6 patentsUS7605431B2Oct 20, 2009
Electrostatic discharge protection apparatus for semiconductor devices
HIMAX TECH LTD9 citations84
US7764476B2Jul 27, 2010
Power-rail ESD protection circuit without lock-on failure
HIMAX TECH LTD7 citations73
US7710696B2May 4, 2010
Transient detection circuit for ESD protection
HIMAX TECH LTD2 citations61
US7675723B2Mar 9, 2010
Transient to digital converters
HIMAX TECH LTD2 citations61
US7855419B2Dec 21, 2010
ESD device layout for effectively reducing internal circuit area and avoiding ESD and breakdown damage and effectively protecting high voltage IC
HIMAX TECH LTD0 citations52
US7826187B2Nov 2, 2010
Transient detection circuit
HIMAX TECH LTD1 citations51
TAIWAN SEMICONDUCTOR MFG
4 patentsUS6566715B1May 20, 2003
Substrate-triggered technique for on-chip ESD protection circuit
TAIWAN SEMICONDUCTOR MFG89 citations98
US6514839B1Feb 4, 2003
ESD implantation method in deep-submicron CMOS technology for high-voltage-tolerant applications with light-doping concentrations
TAIWAN SEMICONDUCTOR MFG46 citations96
US6838734B2Jan 4, 2005
ESD implantation in deep-submicron CMOS technology for high-voltage-tolerant applications
TAIWAN SEMICONDUCTOR MFG35 citations92
US6444404B1Sep 3, 2002
Method of fabricating ESD protection device by using the same photolithographic mask for both the ESD implantation and the silicide blocking regions
TAIWAN SEMICONDUCTOR MFG12 citations74
HSU HSING-CHOU
4 patentsUS8120441B2Feb 21, 2012
Circuit board with a reference plane having multi-part non-conductive regions for decreased crosstalk
HSU HSING-CHOU3 citations59
US8332804B2Dec 11, 2012
Impedance design method
HSU HSING-CHOU0 citations48
US8151241B2Apr 3, 2012
Impedance design method
HSU HSING-CHOU0 citations48
US8204731B2Jun 19, 2012
Signal analyzing method for electronic device having on-chip network and off-chip network
HSU HSING-CHOU0 citations38
AMAZING MICROELECTRONIC CORP
3 patentsUS9024516B2May 5, 2015
Method for fabricating a planar micro-tube discharger structure
AMAZING MICROELECTRONIC CORP0 citations52
US9153679B2Oct 6, 2015
Silicon-controlled rectification device with high efficiency
AMAZING MICROELECTRONIC CORP0 citations50
US9024354B2May 5, 2015
Silicon-controlled rectification device with high efficiency
AMAZING MICROELECTRONIC CORP0 citations50