Inventor

KAWAI HIROJI

JP38 patents

⚠️ This page may combine multiple inventors who share the name “KAWAI HIROJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KAWAI HIROJI

SONY CORP

Semiconductor substrate made of a nitride III-V compound semiconductor having a wurtzite-structured crystal structure

Semiconductor light emitting device

Heterojunction field effect transistor

Field effect transistor with nitride compound

Method for manufacturing field effect transistor

Semiconductor device and its manufacturing method

Manufacturing method for nitride III-V compound semiconductor device using bonding

Manufacturing method of semiconductor device

Method for growing single crystal III-V compound semiconductor layers on non single crystal III-V Compound semiconductor buffer layers

Method of manufacturing a semiconductor laminated substrate, semiconductor crystal substrate and semiconductor device

Semiconductor device and its manufacturing method

Semiconductor device and its manufacturing method

Method for manufacture of cleaved light emitting semiconductor device

Method for growing a nitride compound semiconductor

Semiconductor laminating structure

Cleaved semiconductor device with {11-20} plane

Semiconductor device with cleaved surface

Method and apparatus for vapor deposition

Method of manufacturing a heterojunction bipolar transistor

Method for growing a nitride compound semiconductor

Semiconductor laminated substrate, semiconductor crystal substrate and semiconductor device and method of manufacturing the same

Method for growing a nitride compound semiconductor

Heterojunction bipolar transistor and the manufacturing method thereof

Junction field effect transistor with vertical gate region

Semiconductor light emitting device

Nitride semiconductor light emitting device

Heterojunctional collector-top type bi-polar transistor

Electrodeposition process

Semiconductor device and its manufacturing method

Semiconductor device

Luminescent material and method of making the same

POWDEC KK

Semiconductor device having a polarization super junction field effect transistor, electric equipment, bidirectional field effect transistor, and mounted structure body having the same

Normally-off mode polarization super junction GaN-based field effect transistor and electrical equipment

Normally-off mode polarization super junction GaN-based field effect transistor and electrical equipment

Hetero-junction bipolar transistor and electric device

CHIYODA CHEM ENG CONSTRUCT CO

Method for the combustion treatment of toxic gas-containing waste gas

NAKAJIMA AKIRA

Polarization super-junction low-loss gallium nitride semiconductor device

AGENCY IND SCIENCE TECHN

Semiconductor device