Inventor

KWON HYUNG-SHIN

KR17 patents

⚠️ This page may combine multiple inventors who share the name “KWON HYUNG-SHIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KWON HYUNG-SHIN

SAMSUNG ELECTRONICS CO LTD

Unitary interconnection structures integral with a dielectric layer

Unitary interconnection structures integral with a dielectric layer and fabrication methods thereof

Method of forming a spacer

Semiconductor device having silicide thin film and method of forming the same

Method of improving gate resistance in a memory array

Method of fabricating a semiconductor device having an elevated source/drain

Methods of fabricating semiconductor devices having gate insulating layers with differing thicknesses

Semiconductor device having elevated source/drain

Methods of fabricating semiconductor devices having insulating layers with differing compressive stresses

Method for fabricating a MOS transistor using a self-aligned silicide technique

Semiconductor device having silicide thin film and method of forming the same

Methods for fabricating metal silicide structures using an etch stopping capping layer

Semiconductor memory device, method of testing the same and method of operating the same

Multiple well bias memory

KWON HYUNG-SHIN

Methods of manufacturing semiconductor devices

Semiconductor devices and methods of manufacturing the same

LIM JONG HYOUNG

Semiconductor device, method of adjusting load capacitance for the same, and semiconductor system including the same