Inventor
LIN CHENTING
US15 patents
⚠️ This page may combine multiple inventors who share the name “LIN CHENTING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
8 patentsUS6429131B2Aug 6, 2002
CMP uniformity
INFINEON TECHNOLOGIES AG33 citations88
US6432725B1Aug 13, 2002
Methods for crystallizing metallic oxide dielectric films at low temperature
INFINEON TECHNOLOGIES AG17 citations83
US6794705B2Sep 21, 2004
Multi-layer Pt electrode for DRAM and FRAM with high K dielectric materials
INFINEON TECHNOLOGIES AG10 citations73
US6685796B1Feb 3, 2004
CMP uniformity
INFINEON TECHNOLOGIES AG11 citations72
US6281114B1Aug 28, 2001
Planarization after metal chemical mechanical polishing in semiconductor wafer fabrication
INFINEON TECHNOLOGIES AG9 citations70
US7319270B2Jan 15, 2008
Multi-layer electrode and method of forming the same
INFINEON TECHNOLOGIES AG4 citations62
US6420267B1Jul 16, 2002
Method for forming an integrated barrier/plug for a stacked capacitor
INFINEON TECHNOLOGIES AG5 citations62
US6943113B1Sep 13, 2005
Metal chemical polishing process for minimizing dishing during semiconductor wafer fabrication
INFINEON TECHNOLOGIES AG3 citations61
SIEMENS AG
3 patentsUS6132294AOct 17, 2000
Method of enhancing semiconductor wafer release
SIEMENS AG22 citations92
US6149830ANov 21, 2000
Composition and method for reducing dishing in patterned metal during CMP process
SIEMENS AG26 citations89
US6222220B1Apr 24, 2001
Extended trench for preventing interaction between components of stacked capacitors
SIEMENS AG8 citations73
IBM
3 patentsUS5972787AOct 26, 1999
CMP process using indicator areas to determine endpoint
IBM20 citations89
US6339007B1Jan 15, 2002
Capacitor stack structure and method of fabricating description
IBM15 citations81
US6413866B1Jul 2, 2002
Method of forming a solute-enriched layer in a substrate surface and article formed thereby
IBM0 citations51