P

Inventor

TWU JIH-CHURNG

TW42 patents
⚠️ This page may combine multiple inventors who share the name “TWU JIH-CHURNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG

30 patents
US6197701B1Mar 6, 2001

Lightly nitridation surface for preparing thin-gate oxides

TAIWAN SEMICONDUCTOR MFG90 citations98
US6753249B1Jun 22, 2004

Multilayer interface in copper CMP for low K dielectric

TAIWAN SEMICONDUCTOR MFG64 citations96
US6391780B1May 21, 2002

Method to prevent copper CMP dishing

TAIWAN SEMICONDUCTOR MFG78 citations96
US6380056B1Apr 30, 2002

Lightly nitridation surface for preparing thin-gate oxides

TAIWAN SEMICONDUCTOR MFG75 citations96
US6228760B1May 8, 2001

Use of PE-SiON or PE-OXIDE for contact or via photo and for defect reduction with oxide and W chemical-mechanical polish

TAIWAN SEMICONDUCTOR MFG46 citations96
US6429118B1Aug 6, 2002

Elimination of electrochemical deposition copper line damage for damascene processing

TAIWAN SEMICONDUCTOR MFG40 citations93
US6162716ADec 19, 2000

Amorphous silicon gate with mismatched grain-boundary microstructure

TAIWAN SEMICONDUCTOR MFG44 citations93
US6153526ANov 28, 2000

Method to remove residue in wolfram CMP

TAIWAN SEMICONDUCTOR MFG25 citations93
US6080656AJun 27, 2000

Method for forming a self-aligned copper structure with improved planarity

TAIWAN SEMICONDUCTOR MFG46 citations93
US6620725B1Sep 16, 2003

Reduction of Cu line damage by two-step CMP

TAIWAN SEMICONDUCTOR MFG32 citations92
US6227947B1May 8, 2001

Apparatus and method for chemical mechanical polishing metal on a semiconductor wafer

TAIWAN SEMICONDUCTOR MFG35 citations92
US6503333B2Jan 7, 2003

Method for cleaning semiconductor wafers with ozone-containing solvent

TAIWAN SEMICONDUCTOR MFG24 citations91
US6376377B1Apr 23, 2002

Post chemical mechanical polish (CMP) planarizing substrate cleaning method employing enhanced substrate hydrophilicity

TAIWAN SEMICONDUCTOR MFG14 citations84
US6358119B1Mar 19, 2002

Way to remove CU line damage after CU CMP

TAIWAN SEMICONDUCTOR MFG15 citations84
US6405452B1Jun 18, 2002

Method and apparatus for drying wafers after wet bench

TAIWAN SEMICONDUCTOR MFG14 citations81
US6878578B1Apr 12, 2005

Method for forming a high quality chemical oxide on a freshly cleaned silicon surface as a native oxide replacement

TAIWAN SEMICONDUCTOR MFG15 citations80
US6706577B1Mar 16, 2004

Formation of dual gate oxide by two-step wet oxidation

TAIWAN SEMICONDUCTOR MFG8 citations74
US6589872B1Jul 8, 2003

Use of low-high slurry flow to eliminate copper line damages

TAIWAN SEMICONDUCTOR MFG8 citations74
US6417106B1Jul 9, 2002

Underlayer liner for copper damascene in low k dielectric

TAIWAN SEMICONDUCTOR MFG11 citations74
US6211098B1Apr 3, 2001

Wet oxidation method for forming silicon oxide dielectric layer

TAIWAN SEMICONDUCTOR MFG10 citations74
US6837774B2Jan 4, 2005

Linear chemical mechanical polishing apparatus equipped with programmable pneumatic support platen and method of using

TAIWAN SEMICONDUCTOR MFG9 citations73
US6924215B2Aug 2, 2005

Method of monitoring high tilt angle of medium current implant

TAIWAN SEMICONDUCTOR MFG8 citations68
US6500753B2Dec 31, 2002

Method to reduce the damages of copper lines

TAIWAN SEMICONDUCTOR MFG5 citations63
US6642128B1Nov 4, 2003

Method for high temperature oxidations to prevent oxide edge peeling

TAIWAN SEMICONDUCTOR MFG4 citations62
US6777251B2Aug 17, 2004

Metrology for monitoring a rapid thermal annealing process

TAIWAN SEMICONDUCTOR MFG2 citations60
US6589356B1Jul 8, 2003

Method for cleaning a silicon-based substrate without NH4OH vapor damage

TAIWAN SEMICONDUCTOR MFG5 citations60
US6425191B1Jul 30, 2002

Apparatus and method for reducing solvent residue in a solvent-type dryer for semiconductor wafers

TAIWAN SEMICONDUCTOR MFG6 citations60
US6239023B1May 29, 2001

Method to reduce the damages of copper lines

TAIWAN SEMICONDUCTOR MFG1 citations52
US6500274B2Dec 31, 2002

Apparatus and method for wet cleaning wafers without ammonia vapor damage

TAIWAN SEMICONDUCTOR MFG0 citations50
US6647998B2Nov 18, 2003

Electrostatic charge-free solvent-type dryer for semiconductor wafers

TAIWAN SEMICONDUCTOR MFG0 citations46

TAIWAN SEMICONDUCTOR MFG CO LTD

9 patents

TAIWAN SEMICONDCUTOR MFG COMPA

1 patent

TAIWAN SEMICONDUCTORS MFG CO L

1 patent

TAIWAN SEMICONDUCTOR MFG COMPANY LTD

1 patent