Inventor
NARAYANAN SUNDAR
US35 patents
⚠️ This page may combine multiple inventors who share the name “NARAYANAN SUNDAR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CROSSBAR INC
20 patentsUS9697874B1Jul 4, 2017
Monolithic memory comprising 1T1R code memory and 1TnR storage class memory
CROSSBAR INC24 citations94
US9595670B1Mar 14, 2017
Resistive random access memory (RRAM) cell and method for forming the RRAM cell
CROSSBAR INC25 citations93
US9741765B1Aug 22, 2017
Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
CROSSBAR INC16 citations91
US9425046B1Aug 23, 2016
Method for surface roughness reduction after silicon germanium thin film deposition
CROSSBAR INC7 citations83
US10319908B2Jun 11, 2019
Integrative resistive memory in backend metal layers
CROSSBAR INC9 citations82
US10693062B2Jun 23, 2020
Regulating interface layer formation for two-terminal memory
CROSSBAR INC3 citations73
US9209396B2Dec 8, 2015
Regulating interface layer growth with N2O for two-terminal memory
CROSSBAR INC6 citations73
US10522754B2Dec 31, 2019
Liner layer for dielectric block layer
CROSSBAR INC3 citations72
US10062845B1Aug 28, 2018
Flatness of memory cell surfaces
CROSSBAR INC6 citations72
US10290801B2May 14, 2019
Scalable silicon based resistive memory device
CROSSBAR INC6 citations71
US9437814B1Sep 6, 2016
Mitigating damage from a chemical mechanical planarization process
CROSSBAR INC5 citations69
US11944020B2Mar 26, 2024
Using aluminum as etch stop layer
CROSSBAR INC0 citations62
US10749110B1Aug 18, 2020
Memory stack liner comprising dielectric block layer material
CROSSBAR INC1 citations62
US11793093B2Oct 17, 2023
Resistive random access memory and fabrication techniques
CROSSBAR INC0 citations52
US10873023B2Dec 22, 2020
Using aluminum as etch stop layer
CROSSBAR INC0 citations51
US10096653B2Oct 9, 2018
Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
CROSSBAR INC1 citations51
US11997932B2May 28, 2024
Resistive switching memory having confined filament formation and methods thereof
CROSSBAR INC0 citations47
US12075712B2Aug 27, 2024
Resistive switching memory devices and method(s) for forming the resistive switching memory devices
CROSSBAR INC0 citations46
US10115819B2Oct 30, 2018
Recessed high voltage metal oxide semiconductor transistor for RRAM cell
CROSSBAR INC0 citations41
US9343668B2May 17, 2016
Low temperature in-situ doped silicon-based conductor material for memory cell
CROSSBAR INC0 citations41
CYPRESS SEMICONDUCTOR CORP
14 patentsUS7189652B1Mar 13, 2007
Selective oxidation of gate stack
CYPRESS SEMICONDUCTOR CORP21 citations92
US6943126B1Sep 13, 2005
Deuterium incorporated nitride
CYPRESS SEMICONDUCTOR CORP33 citations92
US6774012B1Aug 10, 2004
Furnace system and method for selectively oxidizing a sidewall surface of a gate conductor by oxidizing a silicon sidewall in lieu of a refractory metal sidewall
CYPRESS SEMICONDUCTOR CORP29 citations92
US6794269B1Sep 21, 2004
Method for and structure formed from fabricating a relatively deep isolation structure
CYPRESS SEMICONDUCTOR CORP17 citations82
US7351663B1Apr 1, 2008
Removing whisker defects
CYPRESS SEMICONDUCTOR CORP11 citations80
US7371637B2May 13, 2008
Oxide-nitride stack gate dielectric
CYPRESS SEMICONDUCTOR CORP6 citations74
US6803330B2Oct 12, 2004
Method for growing ultra thin nitrided oxide
CYPRESS SEMICONDUCTOR CORP7 citations74
US6803321B1Oct 12, 2004
Nitride spacer formation
CYPRESS SEMICONDUCTOR CORP12 citations74
US7172914B1Feb 6, 2007
Method of making uniform oxide layer
CYPRESS SEMICONDUCTOR CORP4 citations63
US6905893B1Jun 14, 2005
Method and structure for determining a concentration profile of an impurity within a semiconductor layer
CYPRESS SEMICONDUCTOR CORP4 citations63
US6773975B1Aug 10, 2004
Formation of a shallow trench isolation structure in integrated circuits
CYPRESS SEMICONDUCTOR CORP4 citations62
US6964929B1Nov 15, 2005
Method of forming a narrow gate, and product produced thereby
CYPRESS SEMICONDUCTOR CORP6 citations58
US7094707B1Aug 22, 2006
Method of forming nitrided oxide in a hot wall single wafer furnace
CYPRESS SEMICONDUCTOR CORP0 citations52
US6664120B1Dec 16, 2003
Method and structure for determining a concentration profile of an impurity within a semiconductor layer
CYPRESS SEMICONDUCTOR CORP1 citations52