P

Inventor

NARAYANAN SUNDAR

US35 patents
⚠️ This page may combine multiple inventors who share the name “NARAYANAN SUNDAR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CROSSBAR INC

20 patents
US9697874B1Jul 4, 2017

Monolithic memory comprising 1T1R code memory and 1TnR storage class memory

CROSSBAR INC24 citations94
US9595670B1Mar 14, 2017

Resistive random access memory (RRAM) cell and method for forming the RRAM cell

CROSSBAR INC25 citations93
US9741765B1Aug 22, 2017

Monolithically integrated resistive memory using integrated-circuit foundry compatible processes

CROSSBAR INC16 citations91
US9425046B1Aug 23, 2016

Method for surface roughness reduction after silicon germanium thin film deposition

CROSSBAR INC7 citations83
US10319908B2Jun 11, 2019

Integrative resistive memory in backend metal layers

CROSSBAR INC9 citations82
US10693062B2Jun 23, 2020

Regulating interface layer formation for two-terminal memory

CROSSBAR INC3 citations73
US9209396B2Dec 8, 2015

Regulating interface layer growth with N2O for two-terminal memory

CROSSBAR INC6 citations73
US10522754B2Dec 31, 2019

Liner layer for dielectric block layer

CROSSBAR INC3 citations72
US10062845B1Aug 28, 2018

Flatness of memory cell surfaces

CROSSBAR INC6 citations72
US10290801B2May 14, 2019

Scalable silicon based resistive memory device

CROSSBAR INC6 citations71
US9437814B1Sep 6, 2016

Mitigating damage from a chemical mechanical planarization process

CROSSBAR INC5 citations69
US11944020B2Mar 26, 2024

Using aluminum as etch stop layer

CROSSBAR INC0 citations62
US10749110B1Aug 18, 2020

Memory stack liner comprising dielectric block layer material

CROSSBAR INC1 citations62
US11793093B2Oct 17, 2023

Resistive random access memory and fabrication techniques

CROSSBAR INC0 citations52
US10873023B2Dec 22, 2020

Using aluminum as etch stop layer

CROSSBAR INC0 citations51
US10096653B2Oct 9, 2018

Monolithically integrated resistive memory using integrated-circuit foundry compatible processes

CROSSBAR INC1 citations51
US11997932B2May 28, 2024

Resistive switching memory having confined filament formation and methods thereof

CROSSBAR INC0 citations47
US12075712B2Aug 27, 2024

Resistive switching memory devices and method(s) for forming the resistive switching memory devices

CROSSBAR INC0 citations46
US10115819B2Oct 30, 2018

Recessed high voltage metal oxide semiconductor transistor for RRAM cell

CROSSBAR INC0 citations41
US9343668B2May 17, 2016

Low temperature in-situ doped silicon-based conductor material for memory cell

CROSSBAR INC0 citations41

CYPRESS SEMICONDUCTOR CORP

14 patents
US7189652B1Mar 13, 2007

Selective oxidation of gate stack

CYPRESS SEMICONDUCTOR CORP21 citations92
US6943126B1Sep 13, 2005

Deuterium incorporated nitride

CYPRESS SEMICONDUCTOR CORP33 citations92
US6774012B1Aug 10, 2004

Furnace system and method for selectively oxidizing a sidewall surface of a gate conductor by oxidizing a silicon sidewall in lieu of a refractory metal sidewall

CYPRESS SEMICONDUCTOR CORP29 citations92
US6794269B1Sep 21, 2004

Method for and structure formed from fabricating a relatively deep isolation structure

CYPRESS SEMICONDUCTOR CORP17 citations82
US7351663B1Apr 1, 2008

Removing whisker defects

CYPRESS SEMICONDUCTOR CORP11 citations80
US7371637B2May 13, 2008

Oxide-nitride stack gate dielectric

CYPRESS SEMICONDUCTOR CORP6 citations74
US6803330B2Oct 12, 2004

Method for growing ultra thin nitrided oxide

CYPRESS SEMICONDUCTOR CORP7 citations74
US6803321B1Oct 12, 2004

Nitride spacer formation

CYPRESS SEMICONDUCTOR CORP12 citations74
US7172914B1Feb 6, 2007

Method of making uniform oxide layer

CYPRESS SEMICONDUCTOR CORP4 citations63
US6905893B1Jun 14, 2005

Method and structure for determining a concentration profile of an impurity within a semiconductor layer

CYPRESS SEMICONDUCTOR CORP4 citations63
US6773975B1Aug 10, 2004

Formation of a shallow trench isolation structure in integrated circuits

CYPRESS SEMICONDUCTOR CORP4 citations62
US6964929B1Nov 15, 2005

Method of forming a narrow gate, and product produced thereby

CYPRESS SEMICONDUCTOR CORP6 citations58
US7094707B1Aug 22, 2006

Method of forming nitrided oxide in a hot wall single wafer furnace

CYPRESS SEMICONDUCTOR CORP0 citations52
US6664120B1Dec 16, 2003

Method and structure for determining a concentration profile of an impurity within a semiconductor layer

CYPRESS SEMICONDUCTOR CORP1 citations52

RAMKUMAR KRISHNASWAMY

1 patent