Inventor
ASAMI SHINYA
JP29 patents
Patents
29 patentsUS6426512B1Jul 30, 2002
Group III nitride compound semiconductor device
TOYODA GOSEI KK222 citations99
US6342404B1Jan 29, 2002
Group III nitride compound semiconductor device and method for producing
TOYODA GOSEI KK137 citations99
US6040588AMar 21, 2000
Semiconductor light-emitting device
TOYODA GOSEI KK112 citations99
US5945689AAug 31, 1999
Light-emitting semiconductor device using group III nitride compound
TOYODA GOSEI KK111 citations99
US6982435B2Jan 3, 2006
Group III nitride compound semiconductor device and method for producing the same
TOYODA GOSEI KK100 citations98
US6841808B2Jan 11, 2005
Group III nitride compound semiconductor device and method for producing the same
TOYODA GOSEI KK124 citations98
US6423984B1Jul 23, 2002
Light-emitting semiconductor device using gallium nitride compound semiconductor
TOYODA GOSEI KK85 citations98
US6420733B2Jul 16, 2002
Semiconductor light-emitting device and manufacturing method thereof
TOYODA GOSEI KK80 citations98
US5959401ASep 28, 1999
Light-emitting semiconductor device using group III nitride compound
TOYODA GOSEI KK133 citations98
US6593016B1Jul 15, 2003
Group III nitride compound semiconductor device and producing method thereof
TOYODA GOSEI KK41 citations96
US6541293B2Apr 1, 2003
Semiconductor light-emitting device and manufacturing method thereof
TOYODA GOSEI KK63 citations96
US6326236B1Dec 4, 2001
Semiconductor light-emitting device and manufacturing method thereof
TOYODA GOSEI KK78 citations96
US6288416B1Sep 11, 2001
Light-emitting semiconductor device using group III nitride compound
TOYODA GOSEI KK44 citations96
US5753939AMay 19, 1998
Light-emitting semiconductor device using a Group III nitride compound and having a contact layer upon which an electrode is formed
TOYODA GOSEI KK80 citations96
US5650641AJul 22, 1997
Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device
TOYODA GOSEI KK56 citations96
US5587593ADec 24, 1996
Light-emitting semiconductor device using group III nitrogen compound
TOYODA GOSEI KK55 citations96
US6853009B2Feb 8, 2005
Light-emitting semiconductor device using gallium nitride compound semiconductor
TOYODA GOSEI KK16 citations93
US6939733B2Sep 6, 2005
Group III nitride compound semiconductor device and method of producing the same
TOYODA GOSEI KK20 citations92
US6821800B2Nov 23, 2004
Semiconductor light-emitting device and manufacturing method thereof
TOYODA GOSEI KK29 citations92
US6713789B1Mar 30, 2004
Group III nitride compound semiconductor device and method of producing the same
TOYODA GOSEI KK42 citations92
US6623998B2Sep 23, 2003
Method for manufacturing group III nitride compound semiconductor device
TOYODA GOSEI KK32 citations92
US6531719B2Mar 11, 2003
Group III nitride compound semiconductor device
TOYODA GOSEI KK35 citations92
US7045809B2May 16, 2006
Light-emitting semiconductor device using gallium nitride compound semiconductor
TOYODA GOSEI KK5 citations74
US7030414B2Apr 18, 2006
III group nitride compound semiconductor luminescent element
TOYODA GOSEI KK10 citations74
US6872965B2Mar 29, 2005
Group III nitride compound semiconductor device
TOYODA GOSEI KK11 citations74
US6838706B2Jan 4, 2005
Group III nitride compound semiconductor light-emitting device which emits light having a wavelength in a range from 360 to 550 NM
TOYODA GOSEI KK6 citations74
US6645785B2Nov 11, 2003
Light-emitting semiconductor device using group III nitride compound
TOYODA GOSEI KK11 citations74
US6918961B2Jul 19, 2005
Group III nitride compound semiconductor device and producing method therefor
TOYODA GOSEI KK4 citations63
US7045829B2May 16, 2006
Light-emitting semiconductor device using Group III nitride compound
TOYODA GOSEI KK1 citations52