Inventor
IM GI-VIN
KR3 patents
Patents
3 patentsUS7151039B2Dec 19, 2006
Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD84 citations97
US7087482B2Aug 8, 2006
Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD44 citations95
US7425514B2Sep 16, 2008
Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD5 citations73