Inventor
SUVOROV ALEXANDER V
US15 patents
⚠️ This page may combine multiple inventors who share the name “SUVOROV ALEXANDER V”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CREE INC
11 patentsUS6100169AAug 8, 2000
Methods of fabricating silicon carbide power devices by controlled annealing
CREE INC82 citations96
US9887287B1Feb 6, 2018
Power semiconductor devices having gate trenches with implanted sidewalls and related methods
CREE INC86 citations95
US9768259B2Sep 19, 2017
Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling
CREE INC20 citations92
US9984881B2May 29, 2018
Methods of fabricating semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
CREE INC10 citations84
US9484413B2Nov 1, 2016
Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions
CREE INC9 citations84
US11075264B2Jul 27, 2021
Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods
CREE INC8 citations83
US7476594B2Jan 13, 2009
Methods of fabricating silicon nitride regions in silicon carbide and resulting structures
CREE INC9 citations83
US10217824B2Feb 26, 2019
Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling
CREE INC3 citations73
US11164967B2Nov 2, 2021
Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices
CREE INC0 citations62
US10424660B2Sep 24, 2019
Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices
CREE INC1 citations62
US10103230B2Oct 16, 2018
Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions
CREE INC0 citations52