P

Inventor

HASEGAWA TOSHIO

US48 patents
⚠️ This page may combine multiple inventors who share the name “HASEGAWA TOSHIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOKYO ELECTRON LTD

27 patents
US7776733B2Aug 17, 2010

Method for depositing titanium nitride films for semiconductor manufacturing

TOKYO ELECTRON LTD63 citations98
US10361366B2Jul 23, 2019

Resistive random accress memory containing a conformal titanium aluminum carbide film and method of making

TOKYO ELECTRON LTD324 citations96
US6773687B1Aug 10, 2004

Exhaust apparatus for process apparatus and method of removing impurity gas

TOKYO ELECTRON LTD27 citations92
US7022298B2Apr 4, 2006

Exhaust apparatus for process apparatus and method of removing impurity gas

TOKYO ELECTRON LTD12 citations84
US9330936B2May 3, 2016

Method for depositing metal layers on germanium-containing films using metal chloride precursors

TOKYO ELECTRON LTD6 citations73
US9101067B2Aug 4, 2015

Method for forming copper wiring

TOKYO ELECTRON LTD4 citations73
US11873560B2Jan 16, 2024

Abnormality detection system and control board

TOKYO ELECTRON LTD2 citations72
US11450512B2Sep 20, 2022

Plasma processing method

TOKYO ELECTRON LTD2 citations72
US11915931B2Feb 27, 2024

Extreme ultraviolet lithography patterning method

TOKYO ELECTRON LTD2 citations71
US9607888B2Mar 28, 2017

Integration of ALD barrier layer and CVD Ru liner for void-free Cu filling

TOKYO ELECTRON LTD2 citations71
US11081322B2Aug 3, 2021

Film forming apparatus, cleaning method for film forming apparatus and recording medium

TOKYO ELECTRON LTD5 citations70
US12404582B2Sep 2, 2025

Method and apparatus for embedding ruthenium in recess formed on substrate surface

TOKYO ELECTRON LTD0 citations63
US7985680B2Jul 26, 2011

Method of forming aluminum-doped metal carbonitride gate electrodes

TOKYO ELECTRON LTD3 citations63
US7776742B2Aug 17, 2010

Film-forming method

TOKYO ELECTRON LTD3 citations63
US7589020B2Sep 15, 2009

Method for depositing titanium nitride films for semiconductor manufacturing

TOKYO ELECTRON LTD2 citations63
US6448181B2Sep 10, 2002

Method for forming film

TOKYO ELECTRON LTD2 citations63
US11387112B2Jul 12, 2022

Surface processing method and processing system

TOKYO ELECTRON LTD1 citations62
US12494369B2Dec 9, 2025

Extreme ultraviolet lithography patterning method

TOKYO ELECTRON LTD0 citations61
US10199268B2Feb 5, 2019

Film forming method and film forming system

TOKYO ELECTRON LTD1 citations60
US12509770B2Dec 30, 2025

Film forming method and film forming apparatus

TOKYO ELECTRON LTD0 citations52
US9698020B2Jul 4, 2017

CMOS Vt control integration by modification of metal-containing gate electrodes

TOKYO ELECTRON LTD0 citations52
US7935384B2May 3, 2011

Film forming method

TOKYO ELECTRON LTD1 citations52
US10872764B2Dec 22, 2020

Film forming method

TOKYO ELECTRON LTD0 citations51
US10535528B2Jan 14, 2020

Method of forming titanium oxide film and method of forming hard mask

TOKYO ELECTRON LTD0 citations51
US7989353B2Aug 2, 2011

Method for in-situ refurbishing a ceramic substrate holder

TOKYO ELECTRON LTD0 citations50
US7514120B2Apr 7, 2009

Precoat film forming method

TOKYO ELECTRON LTD0 citations42
US8846474B2Sep 30, 2014

Dual workfunction semiconductor devices and methods for forming thereof

TOKYO ELECTRON LTD0 citations41

TOKYO KIKAI SEISAKUSHO LTD

7 patents

MITSUBISHI ELECTRIC CORP

3 patents

HITACHI CONSTRUCTION MACHINERY

3 patents

ASAHI DOW LTD

1 patent

FUJI ELECTRIC CO LTD

1 patent

NISHIOKA TSUYOSHI

1 patent

KABUSHIKIKAISHA TOKYO KIKAI SE

1 patent

MITSUBISHI CHEM CORP

1 patent

MITSUBISHI CHEMICAL UK LTD

1 patent

HASEGAWA TOSHIO

1 patent

MORIYA TSUYOSHI

1 patent