P

Inventor

YAMANISHI NOBUYUKI

JP8 patents
⚠️ This page may combine multiple inventors who share the name “YAMANISHI NOBUYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NEC CORP

3 patents
US6307730B1Oct 23, 2001

Capacitor formed by lower electrode having inner and outer uneven surfaces

NEC CORP22 citations90
US6399439B1Jun 4, 2002

Method for manufacturing semiconductor device

NEC CORP14 citations83
US6436761B1Aug 20, 2002

Method for manufacturing semiconductor memory devices

NEC CORP3 citations62

NEC ELECTRONICS CORP

2 patents
US7737555B2Jun 15, 2010

Semiconductor method having silicon-diffused metal wiring layer

NEC ELECTRONICS CORP6 citations73
US7687917B2Mar 30, 2010

Single damascene structure semiconductor device having silicon-diffused metal wiring layer

NEC ELECTRONICS CORP7 citations73

OHTO KOICHI

2 patents
US8642467B2Feb 4, 2014

Semiconductor device having silicon-diffused metal wiring layer and its manufacturing method

OHTO KOICHI1 citations59
US8115318B2Feb 14, 2012

Semiconductor device having silicon-diffused metal wiring layer and its manufacturing method

OHTO KOICHI1 citations59

RENESAS ELECTRONICS CORP

1 patent
US7842602B2Nov 30, 2010

Semiconductor device having silicon-diffused metal wiring layer and its manufacturing method

RENESAS ELECTRONICS CORP3 citations62