Inventor

OTSUKA NOBUAKI

JP27 patents

⚠️ This page may combine multiple inventors who share the name “OTSUKA NOBUAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OTSUKA NOBUAKI

TOSHIBA KK

Semiconductor device

Semiconductor device with impedance controllable output buffer

Nonvolatile semiconductor memory in which the number of programming or erasing bits increases with the progress of programming or erasing

Non-volatile semiconductor memory device and data erasing method therefor

Non-volatile semiconductor memory having improved testing circuitry

Semiconductor electrically programmable fuse element with amorphous silicon layer after programming and method of programming the same

Semiconductor memory device

Fuse circuit

Resistance division circuit and semiconductor device

Semiconductor memory device having sense and data lines for use to read and write operations

Semiconductor memory device of double-data rate mode

Semiconductor integrated circuit

Semiconductor memory device with improved resistance to disturbance and improved writing characteristic

Semiconductor memory device and semiconductor device

Nonvolatile memory including a verify circuit

Level shifter circuit

Semiconductor device with test circuit

Semiconductor device having storage circuit which stores data in nonvolatile manner by using fuse element

Nonvolatile semiconductor memory in which the number of programming or erasing bits increases with the progress of programming or erasing

Memory cell structure of SRAM

Semiconductor memory device

Semiconductor memory device including a static memory cell

Semiconductor memory device

Semiconductor device formed by cascade-connecting a plurality of diodes

Semiconductor memory device

TOKYO SHIBAURA ELECTRIC CO

Semiconductor memory device

OTSUKA NOBUAKI

Semiconductor electrically programmable fuse element with amorphous silicon layer after programming and method of programming the same