Inventor

CHILDRESS JEFFREY R

US50 patents

⚠️ This page may combine multiple inventors who share the name “CHILDRESS JEFFREY R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHILDRESS JEFFREY R

HITACHI GLOBAL STORAGE TECH

Magnetic tunnel junction device with bottom free layer and improved underlayer

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with improved ferromagnetic free layer structure

Magnetoresistive sensor based on spin accumulation effect with free layer stabilized by in-stack orthogonal magnetic coupling

Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stack orthogonal magnetic coupling

Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic Heusler alloy in the pinned layer

Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stack orthogonal magnetic coupling to an antiparallel pinned biasing layer

Current-perpendicular-to-the-plane spin-valve (CPP-SV) sensor with current-confining apertures concentrated near the sensing edge

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with CoFeGe ferromagnetic layers

Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure in the collector region and a pinned layer structure in the emitter region

Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-free layer structure and low current-induced noise

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-pinned structure having segregated grains of a ferromagnetic material and additive Cu, Au or Ag

Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure in the collector or emitter region

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with improved antiparallel-pinned structure

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with high-resistivity amorphous ferromagnetic layers

HGST Netherlands BV

Dual current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with antiparallel-free (APF) structure and integrated reference layers/shields

Scissoring-type current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with free layers having shape anisotropy

Tunneling magnetoresistive (TMR) read head with low magnetic noise

Magnetic sensor with doped ferromagnetic cap and/or underlayer

Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with magnetic damping material at the sensor edges

Current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor with indium-zinc-oxide (IZO) spacer layer

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with multilayer reference layer including a crystalline CoFeX layer and a Heusler alloy layer

Method for making a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor having a low-coercivity reference layer

Method for making a current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with reduced-width self-aligned top electrode

Magnetic recording head with CPP-GMR spin-valve sensor and extended pinned layer

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with an exchange-coupled reference layer having shape anisotropy

Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor having an antiparallel free (APF) structure with improved magnetic stability

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with reduced-width top and bottom electrodes and method for making

HITACHI GLOBAL STORAGE TECH NL

Method for making a scissoring-type current-perpendicular-to-the-plane (CPP) magnetoresistive sensor

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with CoFeGe ferromagnetic layers and Ag or AgCu spacer layer

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-free layer structure and low current-induced noise

Chemically disordered material used to form a free layer or a pinned layer of a magnetoresistance (MR) read element

Three terminal magnetic sensing device having a track width defined in a localized region by a patterned insulator and methods of making the same

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-pinned layer containing silicon

CAREY MATTHEW J

Magnetic field sensing system using spin-torque diode effect

Scissoring-type current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensors with damped free layer structures

Tunneling magnetoresistive (TMR) device with improved ferromagnetic underlayer for MgO tunneling barrier layer

Method for making a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor containing a ferromagnetic alloy requiring post-deposition annealing

Magnetoresistive sensor employing nitrogenated Cu/Ag under-layers with (100) textured growth as templates for CoFe, CoFeX, and Co2(MnFe)X alloys

IBM

Low resistance magnetic tunnel junction device with bilayer or multilayer tunnel barrier

Tunnel valve flux guide structure formed by oxidation of pinned layer

In-stack longitudinal bias structure for CIP spin valve sensors with bias layer electrically insulated from free layer

Method of manufacturing a current-perpendicular-to-plane magnetoresistive device with oxidized free layer side regions

CHILDRESS JEFFREY R

Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with reference layer integrated in magnetic shield

CPP-GMR sensor with corrosion resistent spacer layer and higher signal/noise ratio

Silver alloy electrical lapping guides (ELGs) for fabrication of disk drive sliders with magnetoresistive sensors

Write head pole laminate structure

BALAMANE HAMID

CPP sensors with hard bias structures that shunt sense current towards a shield

BRINKMAN ELIZABETH ANN

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with multilayer reference layer including a Heusler alloy

BERTHOLD THOMAS R

Method for making a current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor with a confined-current-path (CCP)