Inventor
TAN SAMANTHA
US36 patents
⚠️ This page may combine multiple inventors who share the name “TAN SAMANTHA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LAM RES CORP
31 patentsUS9997357B2Jun 12, 2018
Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
LAM RES CORP430 citations99
US9806252B2Oct 31, 2017
Dry plasma etch method to pattern MRAM stack
LAM RES CORP61 citations98
US9805941B2Oct 31, 2017
Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
LAM RES CORP44 citations97
US9576811B2Feb 21, 2017
Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
LAM RES CORP65 citations97
US9396961B2Jul 19, 2016
Integrated etch/clean for dielectric etch applications
LAM RES CORP105 citations96
US11257674B2Feb 22, 2022
Eliminating yield impact of stochastics in lithography
LAM RES CORP15 citations94
US10796912B2Oct 6, 2020
Eliminating yield impact of stochastics in lithography
LAM RES CORP18 citations94
US10546748B2Jan 28, 2020
Tin oxide films in semiconductor device manufacturing
LAM RES CORP25 citations94
US10374144B2Aug 6, 2019
Dry plasma etch method to pattern MRAM stack
LAM RES CORP21 citations94
US10269566B2Apr 23, 2019
Etching substrates using ale and selective deposition
LAM RES CORP15 citations94
US10186426B2Jan 22, 2019
Integrating atomic scale processes: ALD (atomic layer deposition) and ale (atomic layer etch)
LAM RES CORP16 citations94
US10096487B2Oct 9, 2018
Atomic layer etching of tungsten and other metals
LAM RES CORP24 citations94
US9972504B2May 15, 2018
Atomic layer etching of tungsten for enhanced tungsten deposition fill
LAM RES CORP21 citations94
US9837312B1Dec 5, 2017
Atomic layer etching for enhanced bottom-up feature fill
LAM RES CORP48 citations93
US10056264B2Aug 21, 2018
Atomic layer etching of GaN and other III-V materials
LAM RES CORP20 citations92
US10559468B2Feb 11, 2020
Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
LAM RES CORP13 citations86
US10763083B2Sep 1, 2020
High energy atomic layer etching
LAM RES CORP15 citations85
US11069535B2Jul 20, 2021
Atomic layer etch of tungsten for enhanced tungsten deposition fill
LAM RES CORP7 citations84
US10749103B2Aug 18, 2020
Dry plasma etch method to pattern MRAM stack
LAM RES CORP7 citations84
US10685836B2Jun 16, 2020
Etching substrates using ALE and selective deposition
LAM RES CORP10 citations84
US9984858B2May 29, 2018
ALE smoothness: in and outside semiconductor industry
LAM RES CORP10 citations84
US11011379B2May 18, 2021
Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
LAM RES CORP2 citations73
US10825680B2Nov 3, 2020
Directional deposition on patterned structures
LAM RES CORP3 citations73
US10727073B2Jul 28, 2020
Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
LAM RES CORP5 citations73
US10304659B2May 28, 2019
Ale smoothness: in and outside semiconductor industry
LAM RES CORP4 citations73
US10043672B2Aug 7, 2018
Selective self-aligned patterning of silicon germanium, germanium and type III/V materials using a sulfur-containing mask
LAM RES CORP2 citations73
US11823909B2Nov 21, 2023
Selective processing with etch residue-based inhibitors
LAM RES CORP2 citations71
US11450513B2Sep 20, 2022
Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
LAM RES CORP3 citations71
US11062897B2Jul 13, 2021
Metal doped carbon based hard mask removal in semiconductor fabrication
LAM RES CORP4 citations67
US10741405B2Aug 11, 2020
Selective self-aligned patterning of silicon germanium, germanium and type III/V materials using a sulfur-containing mask
LAM RES CORP0 citations52
US10103056B2Oct 16, 2018
Methods for wet metal seed deposition for bottom up gapfill of features
LAM RES CORP0 citations51