Inventor

KIM YOUNG-PIL

KR76 patents

⚠️ This page may combine multiple inventors who share the name “KIM YOUNG-PIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KIM YOUNG-PIL

SAMSUNG ELECTRONICS CO LTD

Fin field effect transistors having multi-layer fin patterns

Methods of manufacturing integrated circuit devices having contact holes using multiple insulating layers

Method for forming a semiconductor memory device having a vertical multi-layered storage electrode

Semiconductor device having a stress film on a side surface of a fin

Embedded memory logic device using self-aligned silicide and manufacturing method therefor

Methods of forming integrated circuits having memory cell arrays and peripheral circuits therein

Method for manufacturing capacitor of semiconductor memory device

Semiconductor device capacitor manufactured by forming stack with multiple material layers without conductive layer therebetween

Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact pad and integrated circuit devices formed thereby

Methods of forming contact holes using multiple insulating layers

Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact pad

Semiconductor device having transistor

Method of manufacturing a twin well semiconductor device with improved planarity

Methods of forming contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus

CMOS transistor and method of manufacturing the same

Embedded memory logic device using self-aligned silicide and manufacturing method therefor

Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices

Write driver circuit for phase-change memory, memory including the same, and associated methods

MOSFET formed on a strained silicon layer

Semiconductor device test patterns and related methods for precisely measuring leakage currents in semiconductor cell transistors

Semiconductor devices having contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus

SEAGATE TECHNOLOGY LLC

Post-program conditioning of stacked memory cells prior to an initial read operation

Polarity dependent switch for resistive sense memory

Linearly related threshold voltage offsets

Fast soft data by detecting leakage current and sensing time

Temperature tracking to manage threshold voltages in a memory

Polarity dependent switch for resistive sense memory

Retention based defecting in a hybrid memory system

Multi-dimentional data randomization

Adhesion enhancement of thin film PZT structure

Magnetic memory with magnetic tunnel junction cell sets

KIM YOUNG PIL

Vertical transistor with hardening implatation

Schottky diode switch and memory units containing the same

Schottky diode switch and memory units containing the same

Schottky diode switch and memory units containing the same

SOITEC SILICON ON INSULATOR

Process for preparing a support for a semiconductor structure

Supports for semiconductor structures

Process for preparing a support for a semiconductor structure

Method for forming a high resistivity handle support for composite substrate

MICRON TECHNOLOGY INC

JUNG CHULMIN

Bit line charge accumulation sensing for resistive changing memory

Polarity dependent switch for resistive sense memory

KOREA RES INST CHEM TECH

Diene copolymer substituted by alkoxy silane, and organic and inorganic hybrid composition comprising the same

DONGBU ELECTRONICS CO LTD

Method of making a MOS transistor

KOREA ADVANCED INST SCI & TECH

Construction of gold nanoparticle-based peptide chip, and assaying enzyme activity and inhibitor effect using secondary ion mass spectrometric analysis thereof

SANDISK TECHNOLOGIES LLC

Reverse sensing for data recovery in non-volatile memory structures

SUN MING

Programmable metallization cell switch and memory units containing the same

KIM HO-JUNG

Identification of data positions in magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices

KIM YOUNG-PIL

Method of fabricating semiconductor device including a recessed channel