Inventor
NAKANISHI TOSHIRO
KR25 patents
⚠️ This page may combine multiple inventors who share the name “NAKANISHI TOSHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
8 patentsUS9721957B2Aug 1, 2017
Static random access memory (SRAM) cells including vertical channel transistors
SAMSUNG ELECTRONICS CO LTD17 citations89
US9768266B2Sep 19, 2017
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations83
US9564499B2Feb 7, 2017
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations82
US10903327B2Jan 26, 2021
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US11888042B2Jan 30, 2024
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11588032B2Feb 21, 2023
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US9443735B2Sep 13, 2016
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations51
US9997523B2Jun 12, 2018
Static random access memory (SRAM) cells including vertical channel transistors and methods of forming the same
SAMSUNG ELECTRONICS CO LTD1 citations49
FUJITSU LTD
5 patentsUS5693578ADec 2, 1997
Method of forming thin silicon oxide film with high dielectric breakdown and hot carrier resistance
FUJITSU LTD111 citations97
US5504022AApr 2, 1996
Method of making a semiconductor memory device having a floating gate
FUJITSU LTD42 citations92
US6468926B1Oct 22, 2002
Manufacture method and system for semiconductor device with thin gate insulating film of oxynitride
FUJITSU LTD22 citations91
US6984267B2Jan 10, 2006
Manufacture system for semiconductor device with thin gate insulating film
FUJITSU LTD8 citations72
US5217908AJun 8, 1993
Semiconductor device having an insulator film of silicon oxide in which oh ions are incorporated
FUJITSU LTD3 citations62
NAKANISHI TOSHIRO
4 patentsUS8319276B2Nov 27, 2012
Non-volatile semiconductor memory devices having charge trap layers between word lines and active regions thereof
NAKANISHI TOSHIRO2 citations60
US8278698B2Oct 2, 2012
Nonvolatile memory device and method of forming the same
NAKANISHI TOSHIRO0 citations50
US8785276B2Jul 22, 2014
Methods for fabricating a cell string and a non-volatile memory device including the cell string
NAKANISHI TOSHIRO0 citations49
US8123505B2Feb 28, 2012
Reciprocating pump with sealing collar arrangement
NAKANISHI TOSHIRO0 citations39