Inventor
LEE CHOONG-MAN
KR16 patents
⚠️ This page may combine multiple inventors who share the name “LEE CHOONG-MAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
9 patentsUS7569417B2Aug 4, 2009
Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device
SAMSUNG ELECTRONICS CO LTD38 citations92
US7482616B2Jan 27, 2009
Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD39 citations92
US8026543B2Sep 27, 2011
Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD12 citations84
US8034683B2Oct 11, 2011
Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed
SAMSUNG ELECTRONICS CO LTD8 citations83
US7858464B2Dec 28, 2010
Methods of manufacturing non-volatile memory devices having insulating layers treated using neutral beam irradiation
SAMSUNG ELECTRONICS CO LTD7 citations73
US7585683B2Sep 8, 2009
Methods of fabricating ferroelectric devices
SAMSUNG ELECTRONICS CO LTD5 citations62
US7811834B2Oct 12, 2010
Methods of forming a ferroelectric layer and methods of manufacturing a ferroelectric capacitor including the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7855145B2Dec 21, 2010
Gap filling method and method for forming semiconductor memory device using the same
SAMSUNG ELECTRONICS CO LTD0 citations41
US7585692B2Sep 8, 2009
Thin film layer, heating electrode, phase change memory including thin film layer and methods for forming the same
SAMSUNG ELECTRONICS CO LTD0 citations41