Inventor

THOMAS OLIVIER

FR37 patents

⚠️ This page may combine multiple inventors who share the name “THOMAS OLIVIER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

THOMAS OLIVIER

COMMISSARIAT ENERGIE ATOMIQUE

SRAM memory cell having transistors integrated at several levels and the threshold voltage VT of which is dynamically adjustable

Memory cells in double-gate CMOS technology provided with transistors with two independent gates

SRAM memory with reference bias cell

Device with SRAM memory cells including means for polarizing wells of memory cell transistors

Memory cell with read transistors of the TFET and MOSFET type to reduce leakage current

Method for quantifying a sporting activity

Device and method for writing data to a resistive memory

Integrated circuit with a power transistor gate bias controlled by the leakage current

Suspended-gate MOS transistor with non-volatile operation

Non-volatile SRAM memory cell equipped with mobile gate transistors and piezoelectric operation

Compact field effect transistor with counter-electrode and fabrication method

Circuit for reverse biasing inverters for reducing the power consumption of an SRAM memory

THOMAS OLIVIER

SRAM memory cell provided with transistors having a vertical multichannel structure

Memory cell provided with dual-gate transistors, with independent asymmetric gates

SRAM memory cell with double gate transistors provided means to improve the write margin

SOI integrated circuit comprising adjacent cells of different types

SRAM memory cell with four transistors provided with a counter-electrode

Integrated circuit made out of SOI with transistors having distinct threshold voltages

VINET MAUD

Method for making asymmetric double-gate transistors

Method for fabricating asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrate

Method for fabricating asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrate

Method for making asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrate

CENTRE NAT RECH SCIENT

Method and device for introducing precursors into chamber for chemical vapor deposition

Panicein compounds, compositions and uses thereof

NOEL JEAN-PHILIPPE

Self-contained integrated circuit including adjacent cells of different types

Integrated circuit using FDSOI technology, with well sharing and means for biasing oppositely doped ground planes present in a same well

COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Device and method for writing data to a resistive memory

Reconfigurable cam

BATUDE PERRINE

Circuit with transistors integrated in three dimensions and having a dynamically adjustable threshold voltage VT

COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENE ALT

Non-volatile resistive memory cell comprising metal electrodes and a solid electrolyte between the metal electrodes

DASSAULT AVIAT

Device, especially autonomous and portable for extracting heat from a hot source

BOBBA SHASHIKANTH

Multi-level integrated circuit, device and method for modeling multi-level integrated circuits

Commissariat à I'Energie Atomique et aux Energies Alternatives

Programmable-resistance non-volatile memory

ST MICROELECTRONICS SA

Method and device for adapting the voltage of a MOS transistor bulk

CORONEL PHILIPPE

Substrate provided with a semi-conducting area associated with two counter-electrodes and device comprising one such substrate

INST NAT SANTE RECH MED

Method for preparing particles from an emulsion in supercritical or liquid CO2

BENOIT JEAN-PIERRE

Method of preparing lipid nanoparticles