P

Inventor

EHRENTRAUT GEORG

AT16 patents
⚠️ This page may combine multiple inventors who share the name “EHRENTRAUT GEORG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AUSTRIA AG

8 patents
US10181511B2Jan 15, 2019

Semiconductor device and method of manufacturing a semiconductor device

INFINEON TECHNOLOGIES AUSTRIA AG2 citations73
US11949009B2Apr 2, 2024

Semiconductor die and method of manufacturing the same

INFINEON TECHNOLOGIES AUSTRIA AG2 citations65
US11682704B2Jun 20, 2023

Method of producing a semiconductor device

INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US11316020B2Apr 26, 2022

Semiconductor device and method

INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US9935055B2Apr 3, 2018

Methods of manufacturing a semiconductor device by forming a separation trench

INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US9461004B2Oct 4, 2016

Semiconductor workpiece having a semiconductor substrate with at least two chip areas

INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US9793387B2Oct 17, 2017

Semiconductor device including a vertical PN junction between a body region and a drift region

INFINEON TECHNOLOGIES AUSTRIA AG1 citations51
US9768273B2Sep 19, 2017

Method of forming a trench using epitaxial lateral overgrowth

INFINEON TECHNOLOGIES AUSTRIA AG0 citations50

INFINEON TECHNOLOGIES AUSTRIA

3 patents
US9287376B1Mar 15, 2016

Method of manufacturing a gate trench with thick bottom oxide

INFINEON TECHNOLOGIES AUSTRIA4 citations72
US9070741B2Jun 30, 2015

Method of manufacturing a semiconductor device and a semiconductor workpiece

INFINEON TECHNOLOGIES AUSTRIA2 citations62
US9379196B2Jun 28, 2016

Method of forming a trench using epitaxial lateral overgrowth and deep vertical trench structure

INFINEON TECHNOLOGIES AUSTRIA1 citations50

INFINEON TECHNOLOGIES AG

3 patents
US11195713B2Dec 7, 2021

Methods of forming a silicon-insulator layer and semiconductor device having the same

INFINEON TECHNOLOGIES AG0 citations57
US10622218B2Apr 14, 2020

Segmented edge protection shield

INFINEON TECHNOLOGIES AG0 citations51
US9793129B2Oct 17, 2017

Segmented edge protection shield

INFINEON TECHNOLOGIES AG0 citations51

SEIDEL UWE

1 patent
US8227340B2Jul 24, 2012

Method for producing a copper connection between two sides of a substrate

SEIDEL UWE14 citations79

POELZL MARTIN

1 patent
US8803230B2Aug 12, 2014

Semiconductor transistor having trench contacts and method for forming therefor

POELZL MARTIN0 citations40