Inventor

SHIN KEUNWOOK

KR46 patents

Patents

46 patents

US11682622B2Jun 20, 2023

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

SAMSUNG ELECTRONICS CO LTD5 citations86

US12131905B2Oct 29, 2024

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

SAMSUNG ELECTRONICS CO LTD2 citations73

US11180373B2Nov 23, 2021

Nanocrystalline graphene and method of forming nanocrystalline graphene

SAMSUNG ELECTRONICS CO LTD2 citations73

US11069619B2Jul 20, 2021

Interconnect structure and electronic device employing the same

SAMSUNG ELECTRONICS CO LTD3 citations73

US10971451B2Apr 6, 2021

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

SAMSUNG ELECTRONICS CO LTD2 citations73

US10937885B2Mar 2, 2021

Electronic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations73

US10928723B2Feb 23, 2021

Pellicle for photomask, reticle including the same, and exposure apparatus for lithography

SAMSUNG ELECTRONICS CO LTD2 citations73

US10539868B2Jan 21, 2020

Pellicle for photomask, reticle including the same, and exposure apparatus for lithography

SAMSUNG ELECTRONICS CO LTD3 citations73

US10134628B2Nov 20, 2018

Multilayer structure including diffusion barrier layer and device including the multilayer structure

SAMSUNG ELECTRONICS CO LTD4 citations73

US9905422B2Feb 27, 2018

Two-dimensional material hard mask, method of manufacturing the same, and method of forming material layer pattern using the hard mask

SAMSUNG ELECTRONICS CO LTD2 citations73

US9761532B2Sep 12, 2017

Hybrid interconnect structure and electronic device employing the same

SAMSUNG ELECTRONICS CO LTD4 citations73

US10850985B2Dec 1, 2020

Method of forming nanocrystalline graphene, and device including nanocrystalline graphene

SAMSUNG ELECTRONICS CO LTD3 citations72

US11508664B2Nov 22, 2022

Interconnect structure including graphene-metal barrier and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations70

US12593449B2Mar 31, 2026

Vertical nonvolatile memory device including gate electrodes with metal-doped graphene

SAMSUNG ELECTRONICS CO LTD0 citations62

US12506074B2Dec 23, 2025

Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure

SAMSUNG ELECTRONICS CO LTD0 citations62

US12389630B2Aug 12, 2025

Vertical channel transistor including a graphene insertion layer beweeen a source/drain electrode and a channel pattern

SAMSUNG ELECTRONICS CO LTD0 citations62

US12378120B2Aug 5, 2025

Wiring including graphene layer and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12369359B2Jul 22, 2025

Thin film structure and electronic device including two-dimensional material

SAMSUNG ELECTRONICS CO LTD0 citations62

US12341063B2Jun 24, 2025

Interconnect structure, electronic device including the same, and method of manufacturing interconnect structure

SAMSUNG ELECTRONICS CO LTD0 citations62

US12217958B2Feb 4, 2025

Method of pre-treating substrate and method of directly forming graphene using the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12211744B2Jan 28, 2025

Method of forming nanocrystalline graphene

SAMSUNG ELECTRONICS CO LTD0 citations62

US12183783B2Dec 31, 2024

Stacked structure including two-dimensional material and method of fabricating the stacked structure

SAMSUNG ELECTRONICS CO LTD0 citations62

US12183780B2Dec 31, 2024

Metal-to-semiconductor contact including a 2D crystal material layer

SAMSUNG ELECTRONICS CO LTD0 citations62

US12087840B2Sep 10, 2024

Semiconductor device and capacitor including hydrogen-incorporated oxide layer

SAMSUNG ELECTRONICS CO LTD0 citations62

US12080595B2Sep 3, 2024

Method of forming interconnect structure

SAMSUNG ELECTRONICS CO LTD0 citations62

US12027589B2Jul 2, 2024

Semiconductor device including graphene and method of manufacturing the semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62

US11908918B2Feb 20, 2024

Electronic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11713248B2Aug 1, 2023

Method of growing graphene selectively

SAMSUNG ELECTRONICS CO LTD0 citations62

US11626502B2Apr 11, 2023

Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure

SAMSUNG ELECTRONICS CO LTD1 citations62

US11538918B2Dec 27, 2022

Electronic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US11094538B2Aug 17, 2021

Method of forming graphene

SAMSUNG ELECTRONICS CO LTD1 citations62

US12421598B2Sep 23, 2025

Nanocrystalline graphene and method of forming nanocrystalline graphene

SAMSUNG ELECTRONICS CO LTD0 citations61

US12400975B2Aug 26, 2025

Interconnect structure and electronic device including the same

SAMSUNG ELECTRONICS CO LTD0 citations61

US12103850B2Oct 1, 2024

Method of forming graphene

SAMSUNG ELECTRONICS CO LTD0 citations61

US12575136B2Mar 10, 2026

Transistor

SAMSUNG ELECTRONICS CO LTD0 citations60

US12014991B2Jun 18, 2024

Interconnect structure including graphene-metal barrier and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations59

US12199165B2Jan 14, 2025

Semiconductor device and electronic apparatus including the semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations52

US12183582B2Dec 31, 2024

Film deposition method and element including film deposited by the film deposition method

SAMSUNG ELECTRONICS CO LTD0 citations52

US11572278B2Feb 7, 2023

Method of forming graphene

SAMSUNG ELECTRONICS CO LTD0 citations52

US9721943B2Aug 1, 2017

Wiring structure and electronic device including the same

SAMSUNG ELECTRONICS CO LTD0 citations52

US11978704B2May 7, 2024

Wiring structure and electronic device employing the same

SAMSUNG ELECTRONICS CO LTD0 citations51

US11149346B2Oct 19, 2021

Method of directly growing carbon material on substrate

SAMSUNG ELECTRONICS CO LTD0 citations50

US10840338B2Nov 17, 2020

Semiconductor device including graphene and method of manufacturing the semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations42

SHIN KEUNWOOK

Patents

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

Graphene structure and method of forming the graphene structure

Method of forming carbon layer and method of forming interconnect structure

Graphene structure and method of forming graphene structure

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

Nanocrystalline graphene and method of forming nanocrystalline graphene

Interconnect structure and electronic device employing the same

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

Electronic device and method of manufacturing the same

Pellicle for photomask, reticle including the same, and exposure apparatus for lithography

Pellicle for photomask, reticle including the same, and exposure apparatus for lithography

Multilayer structure including diffusion barrier layer and device including the multilayer structure

Two-dimensional material hard mask, method of manufacturing the same, and method of forming material layer pattern using the hard mask

Hybrid interconnect structure and electronic device employing the same

Method of forming nanocrystalline graphene, and device including nanocrystalline graphene

Interconnect structure including graphene-metal barrier and method of manufacturing the same

Vertical nonvolatile memory device including gate electrodes with metal-doped graphene

Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure

Vertical channel transistor including a graphene insertion layer beweeen a source/drain electrode and a channel pattern

Wiring including graphene layer and method of manufacturing the same

Thin film structure and electronic device including two-dimensional material

Interconnect structure, electronic device including the same, and method of manufacturing interconnect structure

Method of pre-treating substrate and method of directly forming graphene using the same

Method of forming nanocrystalline graphene

Stacked structure including two-dimensional material and method of fabricating the stacked structure

Metal-to-semiconductor contact including a 2D crystal material layer

Semiconductor device and capacitor including hydrogen-incorporated oxide layer

Method of forming interconnect structure

Semiconductor device including graphene and method of manufacturing the semiconductor device

Electronic device and method of manufacturing the same

Method of growing graphene selectively

Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure

Electronic device and method of manufacturing the same

Method of forming graphene

Nanocrystalline graphene and method of forming nanocrystalline graphene

Interconnect structure and electronic device including the same

Method of forming graphene

Transistor

Interconnect structure including graphene-metal barrier and method of manufacturing the same

Semiconductor device and electronic apparatus including the semiconductor device

Film deposition method and element including film deposited by the film deposition method

Method of forming graphene

Wiring structure and electronic device including the same

Wiring structure and electronic device employing the same

Method of directly growing carbon material on substrate

Semiconductor device including graphene and method of manufacturing the semiconductor device