P

Inventor

LEE CHANG WON

KR78 patents
⚠️ This page may combine multiple inventors who share the name “LEE CHANG WON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

29 patents
US7148100B2Dec 12, 2006

Methods of forming electronic devices including high-k dielectric layers and electrode barrier layers

SAMSUNG ELECTRONICS CO LTD30 citations93
US7696552B2Apr 13, 2010

Semiconductor devices including high-k dielectric materials

SAMSUNG ELECTRONICS CO LTD12 citations84
US7521316B2Apr 21, 2009

Methods of forming gate structures for semiconductor devices

SAMSUNG ELECTRONICS CO LTD8 citations84
US7244645B2Jul 17, 2007

Methods of forming electronic devices including high-k dielectric layers and electrode barrier layers and related structures

SAMSUNG ELECTRONICS CO LTD10 citations84
US9184178B2Nov 10, 2015

Vertical memory devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations83
US7534709B2May 19, 2009

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD12 citations82
US9029252B2May 12, 2015

Nanostructure, optical device including the same, and methods of manufacturing the nanostructure and the optical device

SAMSUNG ELECTRONICS CO LTD6 citations81
US7371669B2May 13, 2008

Method of forming a gate of a semiconductor device

SAMSUNG ELECTRONICS CO LTD7 citations74
US6797559B2Sep 28, 2004

Method of fabricating semiconductor device having metal conducting layer

SAMSUNG ELECTRONICS CO LTD10 citations74
US9996893B2Jun 12, 2018

Display apparatus constituting multi display system and control method thereof

SAMSUNG ELECTRONICS CO LTD2 citations73
US9760156B2Sep 12, 2017

Display apparatus, display system having plural display apparatuses, and method for controlling the display system

SAMSUNG ELECTRONICS CO LTD5 citations73
US7544996B2Jun 9, 2009

Methods of fabricating a semiconductor device having a metal gate pattern

SAMSUNG ELECTRONICS CO LTD4 citations73
US7001817B2Feb 21, 2006

Method for fabricating a semiconductor device

SAMSUNG ELECTRONICS CO LTD7 citations73
US9564588B2Feb 7, 2017

Device for detecting surface plasmon and polarization by using topological insulator, method of manufacturing the device, and method of detecting surface plasmon and polarization

SAMSUNG ELECTRONICS CO LTD5 citations71
US9279937B2Mar 8, 2016

Optical interconnection for stacked integrated circuit

SAMSUNG ELECTRONICS CO LTD3 citations70
US8034701B2Oct 11, 2011

Methods of forming recessed gate electrodes having covered layer interfaces

SAMSUNG ELECTRONICS CO LTD3 citations63
US7998810B2Aug 16, 2011

Methods of forming integrated circuit devices having stacked gate electrodes

SAMSUNG ELECTRONICS CO LTD2 citations63
US7968410B2Jun 28, 2011

Method of fabricating a semiconductor device using a full silicidation process

SAMSUNG ELECTRONICS CO LTD2 citations63
US7910232B2Mar 22, 2011

Information storage devices using magnetic domain wall movement and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations63
US7875939B2Jan 25, 2011

Semiconductor device including an ohmic layer

SAMSUNG ELECTRONICS CO LTD2 citations63
US7772637B2Aug 10, 2010

Semiconductor devices including gate structures and leakage barrier oxides

SAMSUNG ELECTRONICS CO LTD3 citations63
US7582931B2Sep 1, 2009

Recessed gate electrodes having covered layer interfaces and methods of forming the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7544597B2Jun 9, 2009

Method of forming a semiconductor device including an ohmic layer

SAMSUNG ELECTRONICS CO LTD3 citations63
US7465617B2Dec 16, 2008

Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layer

SAMSUNG ELECTRONICS CO LTD4 citations62
US7306996B2Dec 11, 2007

Methods of fabricating a semiconductor device having a metal gate pattern

SAMSUNG ELECTRONICS CO LTD2 citations62
US7005367B2Feb 28, 2006

Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layer

SAMSUNG ELECTRONICS CO LTD2 citations62
US8379287B2Feb 19, 2013

Surface plasmon polariton modulator

SAMSUNG ELECTRONICS CO LTD3 citations61
US11115261B2Sep 7, 2021

System and method of sharing content by using plurality of storages

SAMSUNG ELECTRONICS CO LTD0 citations52
US7772643B2Aug 10, 2010

Methods of fabricating semiconductor device having a metal gate pattern

SAMSUNG ELECTRONICS CO LTD0 citations52

HYUNDAI MOBIS CO LTD

4 patents

HYUNDAI DYMOS INC

3 patents

HYUNDAI MOTOR CO LTD

3 patents

SAMSUNG ELECTRONICS LTD CO

1 patent

SHIN SEUNG-MOK

1 patent

KIM TAE-HO

1 patent

CHUNG HYUN-JONG

1 patent

SAMSUNG MOBILE DISPLAY CO LTD

1 patent

JANG KYUNG-TAE

1 patent

LEE SOO-TAE

1 patent

CHO YOUNG-JIN

1 patent

BAIK CHAN-WOOK

1 patent

ELECTRONICS & TELECOMMUNICATIONS RES INST

1 patent

LEE CHANG-WON

1 patent

Showing the top 50 of 78 patents by PatentIndex Score.