Inventor
PURAKH RAJ VERMA
SG15 patents
Patents
15 patentsUS10347773B2Jul 9, 2019
Split gate non-volatile memory (NVM) with improved programming efficiency
GLOBALFOUNDRIES SG PTE LTD2 citations72
US10032766B2Jul 24, 2018
VDMOS transistors, BCD devices including VDMOS transistors, and methods for fabricating integrated circuits with such devices
GLOBALFOUNDRIES SG PTE LTD2 citations72
US9899527B2Feb 20, 2018
Integrated circuits with gaps
GLOBALFOUNDRIES SG PTE LTD4 citations72
US10529819B2Jan 7, 2020
High voltage Schottky diode and manufacturing method thereof
GLOBALFOUNDRIES SG PTE LTD2 citations71
US10510831B2Dec 17, 2019
Low on resistance high voltage metal oxide semiconductor transistor
GLOBALFOUNDRIES SG PTE LTD2 citations71
US9960115B1May 1, 2018
Heat dissipation and series resistance reduction of PA and RF switch in SLT by backside thick metal
GLOBALFOUNDRIES SG PTE LTD2 citations70
US10522393B2Dec 31, 2019
Devices and methods of forming thereof by post single layer transfer fabrication of device isolation structures
GLOBALFOUNDRIES SG PTE LTD4 citations68
US9831304B1Nov 28, 2017
Integrated circuits with deep trench isolations and methods for producing the same
GLOBALFOUNDRIES SG PTE LTD3 citations68
US10424655B2Sep 24, 2019
Dual gate LDMOS and a process of forming thereof
GLOBALFOUNDRIES SG PTE LTD1 citations62
US10680099B2Jun 9, 2020
Isolated laterally diffused metal oxide semiconductor (LDMOS) transistor having low drain to body capacitance
GLOBALFOUNDRIES SG PTE LTD1 citations61
US10529738B2Jan 7, 2020
Integrated circuits with selectively strained device regions and methods for fabricating same
GLOBALFOUNDRIES SG PTE LTD1 citations61
US9922868B2Mar 20, 2018
Integrated circuits using silicon on insulator substrates and methods of manufacturing the same
GLOBALFOUNDRIES SG PTE LTD1 citations51
US10797159B2Oct 6, 2020
Poly finger fabrication for HCI degradation improvement of ultra-low-Ron EDNMOS
GLOBALFOUNDRIES SG PTE LTD0 citations50
US10319834B2Jun 11, 2019
Poly finger fabrication for HCI degradation improvement of ultra-low-Ron EDNMOS
GLOBALFOUNDRIES SG PTE LTD0 citations50
US10193002B2Jan 29, 2019
MOS varactors and methods for fabricating MOS varactors
GLOBALFOUNDRIES SG PTE LTD0 citations38